A study of ultra shallow junctions by diffusion from self-aligned silicides

H. Jiang; C. M. Osburn; Z. G. Xiao; P. Smith; G. McGuire; G. A. Rozgonyi

A study of ultra shallow junctions by diffusion from self-aligned silicides

H. Jiang
, C. M. Osburn
, Z. G. Xiao
, P. Smith
, G. McGuire
, G. A. Rozgonyi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Original language	English
Title of host publication	ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference
Editors	Heiner Ryssel, Anton Heuberger, Peter Lange
Publisher	IEEE Computer Society
Pages	241-247
Number of pages	7
ISBN (Electronic)	0387510001
ISBN (Print)	9780387510002
State	Published - 1989
Externally published	Yes
Event	19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany Duration: Sep 11 1989 → Sep 14 1989

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	19th European Solid State Device Research Conference, ESSDERC 1989
Country/Territory	Germany
City	Berlin
Period	09/11/89 → 09/14/89

Cite this

Jiang, H., Osburn, C. M., Xiao, Z. G., Smith, P., McGuire, G., & Rozgonyi, G. A. (1989). A study of ultra shallow junctions by diffusion from self-aligned silicides. In H. Ryssel, A. Heuberger, & P. Lange (Eds.), ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference (pp. 241-247). Article 5436620 (European Solid-State Device Research Conference). IEEE Computer Society.

@inproceedings{79edac75e87b4bed88f3138a555de044,

title = "A study of ultra shallow junctions by diffusion from self-aligned silicides",

author = "H. Jiang and Osburn, \{C. M.\} and Xiao, \{Z. G.\} and P. Smith and G. McGuire and Rozgonyi, \{G. A.\}",

year = "1989",

language = "English",

isbn = "9780387510002",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "241--247",

editor = "Heiner Ryssel and Anton Heuberger and Peter Lange",

booktitle = "ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference",

note = "19th European Solid State Device Research Conference, ESSDERC 1989 ; Conference date: 11-09-1989 Through 14-09-1989",

}

Jiang, H, Osburn, CM, Xiao, ZG, Smith, P, McGuire, G & Rozgonyi, GA 1989, A study of ultra shallow junctions by diffusion from self-aligned silicides. in H Ryssel, A Heuberger & P Lange (eds), ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference., 5436620, European Solid-State Device Research Conference, IEEE Computer Society, pp. 241-247, 19th European Solid State Device Research Conference, ESSDERC 1989, Berlin, Germany, 09/11/89.

A study of ultra shallow junctions by diffusion from self-aligned silicides. / Jiang, H.; Osburn, C. M.; Xiao, Z. G. et al.
ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. ed. / Heiner Ryssel; Anton Heuberger; Peter Lange. IEEE Computer Society, 1989. p. 241-247 5436620 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A study of ultra shallow junctions by diffusion from self-aligned silicides

AU - Jiang, H.

AU - Osburn, C. M.

AU - Xiao, Z. G.

AU - Smith, P.

AU - McGuire, G.

AU - Rozgonyi, G. A.

PY - 1989

Y1 - 1989

UR - https://www.scopus.com/pages/publications/84907819561

M3 - Conference contribution

AN - SCOPUS:84907819561

SN - 9780387510002

T3 - European Solid-State Device Research Conference

SP - 241

EP - 247

BT - ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference

A2 - Ryssel, Heiner

A2 - Heuberger, Anton

A2 - Lange, Peter

PB - IEEE Computer Society

T2 - 19th European Solid State Device Research Conference, ESSDERC 1989

Y2 - 11 September 1989 through 14 September 1989

ER -

Jiang H, Osburn CM, Xiao ZG, Smith P, McGuire G, Rozgonyi GA. A study of ultra shallow junctions by diffusion from self-aligned silicides. In Ryssel H, Heuberger A, Lange P, editors, ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. IEEE Computer Society. 1989. p. 241-247. 5436620. (European Solid-State Device Research Conference).

A study of ultra shallow junctions by diffusion from self-aligned silicides

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