A small signal amplifier based on ionic liquid gated black phosphorous field effect transistor

Saptarshi Das; Wei Zhang; Laxman Raju Thoutam; Zhili Xiao; Axel Hoffmann; Marcel Demarteau; Andreas Roelofs

doi:10.1109/LED.2015.2421948

A small signal amplifier based on ionic liquid gated black phosphorous field effect transistor

Saptarshi Das, Wei Zhang, Laxman Raju Thoutam, Zhili Xiao, Axel Hoffmann, Marcel Demarteau, Andreas Roelofs

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

In this letter, we report an analog small signal amplifier based on semiconducting black phosphorus (BP), the most recent addition to the family of 2D crystals. The amplifier, consisting of a BP load resistor and a BP field-effect transistor (FET), was integrated on a single flake. The gain of the amplifier was found to be ∼ 9 and it remained undistorted for input signal frequencies up to 15 kHz. In addition, we also report record high on current of 200 μA/μm at V_DD =-0.5 V in the BP FETs. Our results demonstrate the possibility for the implementation of BP in the future generations of analog devices.

Original language	English
Article number	7084130
Pages (from-to)	621-623
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	6
DOIs	https://doi.org/10.1109/LED.2015.2421948
State	Published - Jun 1 2015
Externally published	Yes

Keywords

Amplifier
Black Phosphorus
Field Effect Transistor
Frequency Response
Gain

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10.1109/LED.2015.2421948

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@article{40b381a115b3461fa16340465a8e7430,

title = "A small signal amplifier based on ionic liquid gated black phosphorous field effect transistor",

abstract = "In this letter, we report an analog small signal amplifier based on semiconducting black phosphorus (BP), the most recent addition to the family of 2D crystals. The amplifier, consisting of a BP load resistor and a BP field-effect transistor (FET), was integrated on a single flake. The gain of the amplifier was found to be ∼ 9 and it remained undistorted for input signal frequencies up to 15 kHz. In addition, we also report record high on current of 200 μA/μm at VDD =-0.5 V in the BP FETs. Our results demonstrate the possibility for the implementation of BP in the future generations of analog devices.",

keywords = "Amplifier, Black Phosphorus, Field Effect Transistor, Frequency Response, Gain",

author = "Saptarshi Das and Wei Zhang and Thoutam, {Laxman Raju} and Zhili Xiao and Axel Hoffmann and Marcel Demarteau and Andreas Roelofs",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2015",

month = jun,

day = "1",

doi = "10.1109/LED.2015.2421948",

language = "English",

volume = "36",

pages = "621--623",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers",

number = "6",

}

TY - JOUR

T1 - A small signal amplifier based on ionic liquid gated black phosphorous field effect transistor

AU - Das, Saptarshi

AU - Zhang, Wei

AU - Thoutam, Laxman Raju

AU - Xiao, Zhili

AU - Hoffmann, Axel

AU - Demarteau, Marcel

AU - Roelofs, Andreas

PY - 2015/6/1

Y1 - 2015/6/1

N2 - In this letter, we report an analog small signal amplifier based on semiconducting black phosphorus (BP), the most recent addition to the family of 2D crystals. The amplifier, consisting of a BP load resistor and a BP field-effect transistor (FET), was integrated on a single flake. The gain of the amplifier was found to be ∼ 9 and it remained undistorted for input signal frequencies up to 15 kHz. In addition, we also report record high on current of 200 μA/μm at VDD =-0.5 V in the BP FETs. Our results demonstrate the possibility for the implementation of BP in the future generations of analog devices.

AB - In this letter, we report an analog small signal amplifier based on semiconducting black phosphorus (BP), the most recent addition to the family of 2D crystals. The amplifier, consisting of a BP load resistor and a BP field-effect transistor (FET), was integrated on a single flake. The gain of the amplifier was found to be ∼ 9 and it remained undistorted for input signal frequencies up to 15 kHz. In addition, we also report record high on current of 200 μA/μm at VDD =-0.5 V in the BP FETs. Our results demonstrate the possibility for the implementation of BP in the future generations of analog devices.

KW - Amplifier

KW - Black Phosphorus

KW - Field Effect Transistor

KW - Frequency Response

KW - Gain

UR - http://www.scopus.com/inward/record.url?scp=84930507287&partnerID=8YFLogxK

U2 - 10.1109/LED.2015.2421948

DO - 10.1109/LED.2015.2421948

M3 - Article

AN - SCOPUS:84930507287

SN - 0741-3106

VL - 36

SP - 621

EP - 623

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

M1 - 7084130

ER -

A small signal amplifier based on ionic liquid gated black phosphorous field effect transistor

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