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A SiGe BiCMOS instrumentation channel for extreme environment applications

  • Chandradevi Ulaganathan
  • , Neena Nambiar
  • , Kimberly Cornett
  • , Robert L. Greenwell
  • , Jeremy A. Yager
  • , Benjamin S. Prothro
  • , Kevin Tham
  • , Suheng Chen
  • , Richard S. Broughton
  • , Guoyuan Fu
  • , Benjamin J. Blalock
  • , Charles L. Britton
  • , M. Nance Ericson
  • , H. Alan Mantooth
  • , Mohammad M. Mojarradi
  • , Richard W. Berger
  • , John D. Cressler

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

An instrumentation channel is designed, implemented, and tested in a 0.5- m SiGe BiCMOS process. The circuit features a reconfigurable Wheatstone bridge network that interfaces an assortment of external sensors to signal processing circuits. Also, analog sampling is implemented in the channel using a flying capacitor configuration. The analog samples are digitized by a low-power multichannel A/D converter. Measurement results show that the instrumentation channel supports input signals up to 200Hz and operates across a wide temperature range of - 180 C to 125 C. This work demonstrates the use of a commercially available first generation SiGe BiCMOS process in designing circuits suitable for extreme environment applications.

Original languageEnglish
Article number156829
JournalVLSI Design
Volume2010
DOIs
StatePublished - 2010
Externally publishedYes

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