TY - JOUR
T1 - A SiGe BiCMOS instrumentation channel for extreme environment applications
AU - Ulaganathan, Chandradevi
AU - Nambiar, Neena
AU - Cornett, Kimberly
AU - Greenwell, Robert L.
AU - Yager, Jeremy A.
AU - Prothro, Benjamin S.
AU - Tham, Kevin
AU - Chen, Suheng
AU - Broughton, Richard S.
AU - Fu, Guoyuan
AU - Blalock, Benjamin J.
AU - Britton, Charles L.
AU - Ericson, M. Nance
AU - Mantooth, H. Alan
AU - Mojarradi, Mohammad M.
AU - Berger, Richard W.
AU - Cressler, John D.
PY - 2010
Y1 - 2010
N2 - An instrumentation channel is designed, implemented, and tested in a 0.5- m SiGe BiCMOS process. The circuit features a reconfigurable Wheatstone bridge network that interfaces an assortment of external sensors to signal processing circuits. Also, analog sampling is implemented in the channel using a flying capacitor configuration. The analog samples are digitized by a low-power multichannel A/D converter. Measurement results show that the instrumentation channel supports input signals up to 200Hz and operates across a wide temperature range of - 180 C to 125 C. This work demonstrates the use of a commercially available first generation SiGe BiCMOS process in designing circuits suitable for extreme environment applications.
AB - An instrumentation channel is designed, implemented, and tested in a 0.5- m SiGe BiCMOS process. The circuit features a reconfigurable Wheatstone bridge network that interfaces an assortment of external sensors to signal processing circuits. Also, analog sampling is implemented in the channel using a flying capacitor configuration. The analog samples are digitized by a low-power multichannel A/D converter. Measurement results show that the instrumentation channel supports input signals up to 200Hz and operates across a wide temperature range of - 180 C to 125 C. This work demonstrates the use of a commercially available first generation SiGe BiCMOS process in designing circuits suitable for extreme environment applications.
UR - http://www.scopus.com/inward/record.url?scp=80052659805&partnerID=8YFLogxK
U2 - 10.1155/2010/156829
DO - 10.1155/2010/156829
M3 - Article
AN - SCOPUS:80052659805
SN - 1065-514X
VL - 2010
JO - VLSI Design
JF - VLSI Design
M1 - 156829
ER -