Abstract
This paper describes a highly accurate dose control circuit (DCC) for the emission of a desired number of electrons from vertically aligned carbon nanofibers (VACNFs) in a massively parallel maskless e-beam lithography system. The parasitic components within the VACNF device cause a premature termination of the electron emission, resulting in underexposure of the photoresist. In this paper, we compensate for the effects of the parasitic components and noise while reducing the area of the chip and achieving a precise count of emitted electrons from the VACNFs to obtain the optimum dose for the e-beam lithography.
Original language | English |
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Article number | 5658146 |
Pages (from-to) | 1132-1140 |
Number of pages | 9 |
Journal | IEEE Transactions on Instrumentation and Measurement |
Volume | 60 |
Issue number | 4 |
DOIs | |
State | Published - Apr 2011 |
Funding
Manuscript received April 29, 2010; revised August 18, 2010; accepted October 5, 2010. Date of publication December 6, 2010; date of current version March 8, 2011. This work was supported by the Defense Advanced Research Projects Agency (DARPA) under Contract DARPA-MIPR-97-1357. The Associate Editor coordinating the review process for this paper was Dr. Theodore Laopoulos.
Keywords
- Dose control circuit (DCC)
- maskless lithography
- vertically aligned carbon nanofiber (VACNF)