A parametric device study for SiC diodes in vehicular applications

Burak Ozpineci, Leon M. Tolbert, Syed K. Islam, Tim J. Theiss

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

Materials and device researchers build switching devices for the circuits researchers to use in their circuits, but they rarely know how and where the devices are going to be used. The circuits people, including power electronics researchers, take the devices as black boxes and use them in their circuits not knowing much about the inside of the devices. The best way to design optimum devices is an interactive design where people designing and building the devices have a close interaction with the people who use them. This study covers the circuit aspects of the SiC power device developed. As a contribution to the above-mentioned interactive design, in this paper, the device parameters, which need to be improved in order to design better devices, will be discussed.

Original languageEnglish
Pages (from-to)1495-1499
Number of pages5
JournalIEEE Vehicular Technology Conference
Volume56
Issue number3
StatePublished - 2002
Externally publishedYes
Event56th Vehicular Technology Conference - Vancouver, BC, Canada
Duration: Sep 24 2002Sep 28 2002

Keywords

  • Conduction losses
  • Dc-dc power supply
  • Device parameters
  • PWM
  • SiC
  • Silicon carbide
  • Switching losses
  • Traction drive

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