Abstract
The paper numerically investigates melt growth of doped gallium-antimonide (GaSb) semiconductor crystals by the vertical gradient freeze (VGF) method utilizing a submerged heater. Electromagnetic (EM) stirring can be induced in the gallium-antimonide melt just above the crystal growth interface by applying a small radial electric current in the melt together with an axial magnetic field. The transport of any dopant by the stirring can promote better compositional homogeneity. This investigation presents a numerical model for the unsteady transport of a dopant during the VGF process by submerged heater growth with a moderate axial magnetic field and a weak electric field. Numerical predictions of the dopant distributions in the crystal and in the melt at several different stages during growth are presented.
Original language | English |
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Pages (from-to) | 908-924 |
Number of pages | 17 |
Journal | International Journal of Engineering Science |
Volume | 43 |
Issue number | 11-12 |
DOIs | |
State | Published - Jul 2005 |
Externally published | Yes |
Funding
This research was supported by the US Air Force Office of Scientific Research under grant FA9550-04-1-0249 and by the NRC/USAF Office of Scientific Research Summer Faculty Fellowship Program. The calculations were performed on the Cray X1 and the SGI Origin 3000 Complex provided by the DoD High Performance Computing Modernization Program under grant AFSNH2487 and on the IBM pSeries 690 provided by the National Computational Science Alliance.