TY - JOUR
T1 - A novel solution to improve static and dynamic retention characteristics by enhancing hydrogen passivation with in situ LD-TEOS/TEOS dual layer
AU - Lee, Jieun
AU - Jang, Dongkyu
AU - Kim, Sangho
AU - Kim, Shindeuk
AU - Park, Taehoon
AU - Hong, Hyeongsun
N1 - Publisher Copyright:
© 2024 The Japan Society of Applied Physics.
PY - 2024/3/1
Y1 - 2024/3/1
N2 - We proposed a novel solution to improve both static and dynamic retention characteristics by additional etching of the thickness of Silicon Boron Nitride (SIBN), stopper when oxide etch, with in situ dual low deposition-tetraethyl orthosilicate (LD-TEOS)/TEOS Dual layer. As Dynamic Random Access Memory Cells shrink, it is difficult to obtain reliable retention properties, so it becomes more significant to reduce the number of interface trap (Nit) by hydrogen passivation. In this work, Nit decreased by reducing the thickness of SIBN, which has low hydrogen diffusion coefficients, improve the static and dynamic retention characteristics simultaneously through enhancing hydrogen passivation with in situ LD-TEOS Dual layer compensating for Metal contact to Other Bit line pad distance margin risk.
AB - We proposed a novel solution to improve both static and dynamic retention characteristics by additional etching of the thickness of Silicon Boron Nitride (SIBN), stopper when oxide etch, with in situ dual low deposition-tetraethyl orthosilicate (LD-TEOS)/TEOS Dual layer. As Dynamic Random Access Memory Cells shrink, it is difficult to obtain reliable retention properties, so it becomes more significant to reduce the number of interface trap (Nit) by hydrogen passivation. In this work, Nit decreased by reducing the thickness of SIBN, which has low hydrogen diffusion coefficients, improve the static and dynamic retention characteristics simultaneously through enhancing hydrogen passivation with in situ LD-TEOS Dual layer compensating for Metal contact to Other Bit line pad distance margin risk.
KW - DRAM cell
KW - hydrogen passivation
KW - interface charge trap
KW - metal contact of bitline
KW - retention characteristics
UR - http://www.scopus.com/inward/record.url?scp=85187226207&partnerID=8YFLogxK
U2 - 10.35848/1347-4065/ad2030
DO - 10.35848/1347-4065/ad2030
M3 - Article
AN - SCOPUS:85187226207
SN - 0021-4922
VL - 63
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
IS - 3
M1 - 03SP78
ER -