A novel all-inverter CMOS based dose control circuit for using vertically aligned carbon NanoFibers in maskless lithography

S. K. Islam; C. Durisety; R. Vijayaraghavan; H. Nguyen; B. Blalock; L. R. Baylor; W. L. Gardner

doi:10.1109/IVNC.2005.1619629

A novel all-inverter CMOS based dose control circuit for using vertically aligned carbon NanoFibers in maskless lithography

S. K. Islam, C. Durisety, R. Vijayaraghavan, H. Nguyen, B. Blalock, L. R. Baylor, W. L. Gardner

Fusion Energy Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper presents a prototype implementation of a circuit that can control charge emission from the Vertically Aligned Carbon NanoFibers (VACNF), for use in the implementation of Digital Electrostatic e-beam Array Lithography (DEAL). This lithography technique can be used to fabricate ultra-small feature size devices, while cutting down the manufacturing costs of photo-masks[1]. These VACNF's are found to be quite robust for use as micro-fabricated field emission devices [2]. The all inverter based dose control circuit (DCC) presented in this paper was fabricated using a standard 0.5μm CMOS process to improve the dose-rate accuracy, when using these VACNF's for etching in maskless lithography. Simulation and measurement results are compared and analyzed, and future work for improving the design is discussed.

Original language	English
Title of host publication	Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005
Pages	348-349
Number of pages	2
DOIs	https://doi.org/10.1109/IVNC.2005.1619629
State	Published - 2005
Event	Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005 - Oxford, United Kingdom Duration: Jul 10 2005 → Jul 14 2005

Publication series

Name	Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005
Volume	2005

Conference

Conference	Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005
Country/Territory	United Kingdom
City	Oxford
Period	07/10/05 → 07/14/05

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/IVNC.2005.1619629

Cite this

Islam, S. K., Durisety, C., Vijayaraghavan, R., Nguyen, H., Blalock, B., Baylor, L. R., & Gardner, W. L. (2005). A novel all-inverter CMOS based dose control circuit for using vertically aligned carbon NanoFibers in maskless lithography. In Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005 (pp. 348-349). Article 1619629 (Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005; Vol. 2005). https://doi.org/10.1109/IVNC.2005.1619629

Islam, S. K. ; Durisety, C. ; Vijayaraghavan, R. et al. / A novel all-inverter CMOS based dose control circuit for using vertically aligned carbon NanoFibers in maskless lithography. Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005. 2005. pp. 348-349 (Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005).

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title = "A novel all-inverter CMOS based dose control circuit for using vertically aligned carbon NanoFibers in maskless lithography",

abstract = "This paper presents a prototype implementation of a circuit that can control charge emission from the Vertically Aligned Carbon NanoFibers (VACNF), for use in the implementation of Digital Electrostatic e-beam Array Lithography (DEAL). This lithography technique can be used to fabricate ultra-small feature size devices, while cutting down the manufacturing costs of photo-masks[1]. These VACNF's are found to be quite robust for use as micro-fabricated field emission devices [2]. The all inverter based dose control circuit (DCC) presented in this paper was fabricated using a standard 0.5μm CMOS process to improve the dose-rate accuracy, when using these VACNF's for etching in maskless lithography. Simulation and measurement results are compared and analyzed, and future work for improving the design is discussed.",

author = "Islam, {S. K.} and C. Durisety and R. Vijayaraghavan and H. Nguyen and B. Blalock and Baylor, {L. R.} and Gardner, {W. L.}",

year = "2005",

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booktitle = "Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005",

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Islam, SK, Durisety, C, Vijayaraghavan, R, Nguyen, H, Blalock, B, Baylor, LR & Gardner, WL 2005, A novel all-inverter CMOS based dose control circuit for using vertically aligned carbon NanoFibers in maskless lithography. in Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005., 1619629, Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, vol. 2005, pp. 348-349, Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, Oxford, United Kingdom, 07/10/05. https://doi.org/10.1109/IVNC.2005.1619629

A novel all-inverter CMOS based dose control circuit for using vertically aligned carbon NanoFibers in maskless lithography. / Islam, S. K.; Durisety, C.; Vijayaraghavan, R. et al.
Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005. 2005. p. 348-349 1619629 (Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Nguyen, H.

AU - Blalock, B.

AU - Baylor, L. R.

AU - Gardner, W. L.

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AB - This paper presents a prototype implementation of a circuit that can control charge emission from the Vertically Aligned Carbon NanoFibers (VACNF), for use in the implementation of Digital Electrostatic e-beam Array Lithography (DEAL). This lithography technique can be used to fabricate ultra-small feature size devices, while cutting down the manufacturing costs of photo-masks[1]. These VACNF's are found to be quite robust for use as micro-fabricated field emission devices [2]. The all inverter based dose control circuit (DCC) presented in this paper was fabricated using a standard 0.5μm CMOS process to improve the dose-rate accuracy, when using these VACNF's for etching in maskless lithography. Simulation and measurement results are compared and analyzed, and future work for improving the design is discussed.

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Islam SK, Durisety C, Vijayaraghavan R, Nguyen H, Blalock B, Baylor LR et al. A novel all-inverter CMOS based dose control circuit for using vertically aligned carbon NanoFibers in maskless lithography. In Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005. 2005. p. 348-349. 1619629. (Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005). doi: 10.1109/IVNC.2005.1619629

A novel all-inverter CMOS based dose control circuit for using vertically aligned carbon NanoFibers in maskless lithography

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