A new type diluted magnetic semiconductor Li(Zn,Mn)As

Z. Deng; Q. Q. Liu; X. C. Wang; J. L. Zhu; S. M. Feng; L. C. Chen; R. C. Yu; C. Arguello; T. Goko; F. L. Ning; J. S. Zhang; Y. Y. Wang; A. A. Aczel; T. Munsie; T. J. Williams; G. M. Luke; T. Kakeshita; S. Uchida; W. Higemoto; T. U. Ito; Bo Gu; S. Maekawa; G. D. Morris; Y. J. Uemura; C. Q. Jin

doi:10.1088/1742-6596/400/3/032033

A new type diluted magnetic semiconductor Li(Zn,Mn)As

Z. Deng, Q. Q. Liu, X. C. Wang, J. L. Zhu, S. M. Feng, L. C. Chen, R. C. Yu, C. Arguello, T. Goko, F. L. Ning, J. S. Zhang, Y. Y. Wang, A. A. Aczel, T. Munsie, T. J. Williams, G. M. Luke, T. Kakeshita, S. Uchida, W. Higemoto, T. U. ItoBo Gu, S. Maekawa, G. D. Morris, Y. J. Uemura, C. Q. Jin

Research output: Contribution to journal › Conference article › peer-review

Abstract

Diluted magnetic semiconductor (DMS) exhibits unique magnetic and transport properties. The well known DMS is (Ga,Mn)As that is in thin film form so far only. However Mn dopant brings both localized spins and carriers in Ga _1-xMn_xAs, result in the lack of independent control of local moment and carrier densities. It is therefore difficult to study or control charge and spin variable quantitatively. Here we report that an individual control of carrier and spin can be realized in a new type of DMS for Mn-doped I-II-V type semiconductor Li_1+yZn_1-xMn _xAs in bulk. The Li(Zn,Mn)As polycrystalline samples showed ferromagnetic transition temperature (T_C) up to 50K and spontaneous magnetization up to 2.9 μ_B per Mn. The other advantage of new DMS over III-V DMSs is the availability of bulk specimens so far for these type of DMS Moreover the new DMS shows a soft magnetic behavior with the coercive force < 100Oe which would be promising for prospective application. Muon spin relaxtion (μSR) probed static magnetic order of full volume in the ferromagnetic region. Electrical transport properties showe Li_1+y (Zn,Mn)As (y = 0.05-0.1) compounds have p-type carriers since excess Li substitutes Zn sites presumably[1].

Original language	English
Article number	032033
Journal	Journal of Physics: Conference Series
Volume	400
Issue number	PART 3
DOIs	https://doi.org/10.1088/1742-6596/400/3/032033
State	Published - 2012
Externally published	Yes
Event	26th International Conference on Low Temperature Physics, LT 2011 - Beijing, China Duration: Aug 10 2011 → Aug 17 2011

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Deng, Z., Liu, Q. Q., Wang, X. C., Zhu, J. L., Feng, S. M., Chen, L. C., Yu, R. C., Arguello, C., Goko, T., Ning, F. L., Zhang, J. S., Wang, Y. Y., Aczel, A. A., Munsie, T., Williams, T. J., Luke, G. M., Kakeshita, T., Uchida, S., Higemoto, W., ... Jin, C. Q. (2012). A new type diluted magnetic semiconductor Li(Zn,Mn)As. Journal of Physics: Conference Series, 400(PART 3), Article 032033. https://doi.org/10.1088/1742-6596/400/3/032033

@article{f12c9dc3628644f884bf2517668660bb,

title = "A new type diluted magnetic semiconductor Li(Zn,Mn)As",

abstract = "Diluted magnetic semiconductor (DMS) exhibits unique magnetic and transport properties. The well known DMS is (Ga,Mn)As that is in thin film form so far only. However Mn dopant brings both localized spins and carriers in Ga 1-xMnxAs, result in the lack of independent control of local moment and carrier densities. It is therefore difficult to study or control charge and spin variable quantitatively. Here we report that an individual control of carrier and spin can be realized in a new type of DMS for Mn-doped I-II-V type semiconductor Li1+yZn1-xMn xAs in bulk. The Li(Zn,Mn)As polycrystalline samples showed ferromagnetic transition temperature (TC) up to 50K and spontaneous magnetization up to 2.9 μB per Mn. The other advantage of new DMS over III-V DMSs is the availability of bulk specimens so far for these type of DMS Moreover the new DMS shows a soft magnetic behavior with the coercive force < 100Oe which would be promising for prospective application. Muon spin relaxtion (μSR) probed static magnetic order of full volume in the ferromagnetic region. Electrical transport properties showe Li1+y (Zn,Mn)As (y = 0.05-0.1) compounds have p-type carriers since excess Li substitutes Zn sites presumably[1].",

author = "Z. Deng and Liu, {Q. Q.} and Wang, {X. C.} and Zhu, {J. L.} and Feng, {S. M.} and Chen, {L. C.} and Yu, {R. C.} and C. Arguello and T. Goko and Ning, {F. L.} and Zhang, {J. S.} and Wang, {Y. Y.} and Aczel, {A. A.} and T. Munsie and Williams, {T. J.} and Luke, {G. M.} and T. Kakeshita and S. Uchida and W. Higemoto and Ito, {T. U.} and Bo Gu and S. Maekawa and Morris, {G. D.} and Uemura, {Y. J.} and Jin, {C. Q.}",

year = "2012",

doi = "10.1088/1742-6596/400/3/032033",

language = "English",

volume = "400",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

number = "PART 3",

note = "26th International Conference on Low Temperature Physics, LT 2011 ; Conference date: 10-08-2011 Through 17-08-2011",

}

Deng, Z, Liu, QQ, Wang, XC, Zhu, JL, Feng, SM, Chen, LC, Yu, RC, Arguello, C, Goko, T, Ning, FL, Zhang, JS, Wang, YY, Aczel, AA, Munsie, T, Williams, TJ, Luke, GM, Kakeshita, T, Uchida, S, Higemoto, W, Ito, TU, Gu, B, Maekawa, S, Morris, GD, Uemura, YJ & Jin, CQ 2012, 'A new type diluted magnetic semiconductor Li(Zn,Mn)As', Journal of Physics: Conference Series, vol. 400, no. PART 3, 032033. https://doi.org/10.1088/1742-6596/400/3/032033

TY - JOUR

T1 - A new type diluted magnetic semiconductor Li(Zn,Mn)As

AU - Deng, Z.

AU - Liu, Q. Q.

AU - Wang, X. C.

AU - Zhu, J. L.

AU - Feng, S. M.

AU - Chen, L. C.

AU - Yu, R. C.

AU - Arguello, C.

AU - Goko, T.

AU - Ning, F. L.

AU - Zhang, J. S.

AU - Wang, Y. Y.

AU - Aczel, A. A.

AU - Munsie, T.

AU - Williams, T. J.

AU - Luke, G. M.

AU - Kakeshita, T.

AU - Uchida, S.

AU - Higemoto, W.

AU - Ito, T. U.

AU - Gu, Bo

AU - Maekawa, S.

AU - Morris, G. D.

AU - Uemura, Y. J.

AU - Jin, C. Q.

PY - 2012

Y1 - 2012

N2 - Diluted magnetic semiconductor (DMS) exhibits unique magnetic and transport properties. The well known DMS is (Ga,Mn)As that is in thin film form so far only. However Mn dopant brings both localized spins and carriers in Ga 1-xMnxAs, result in the lack of independent control of local moment and carrier densities. It is therefore difficult to study or control charge and spin variable quantitatively. Here we report that an individual control of carrier and spin can be realized in a new type of DMS for Mn-doped I-II-V type semiconductor Li1+yZn1-xMn xAs in bulk. The Li(Zn,Mn)As polycrystalline samples showed ferromagnetic transition temperature (TC) up to 50K and spontaneous magnetization up to 2.9 μB per Mn. The other advantage of new DMS over III-V DMSs is the availability of bulk specimens so far for these type of DMS Moreover the new DMS shows a soft magnetic behavior with the coercive force < 100Oe which would be promising for prospective application. Muon spin relaxtion (μSR) probed static magnetic order of full volume in the ferromagnetic region. Electrical transport properties showe Li1+y (Zn,Mn)As (y = 0.05-0.1) compounds have p-type carriers since excess Li substitutes Zn sites presumably[1].

AB - Diluted magnetic semiconductor (DMS) exhibits unique magnetic and transport properties. The well known DMS is (Ga,Mn)As that is in thin film form so far only. However Mn dopant brings both localized spins and carriers in Ga 1-xMnxAs, result in the lack of independent control of local moment and carrier densities. It is therefore difficult to study or control charge and spin variable quantitatively. Here we report that an individual control of carrier and spin can be realized in a new type of DMS for Mn-doped I-II-V type semiconductor Li1+yZn1-xMn xAs in bulk. The Li(Zn,Mn)As polycrystalline samples showed ferromagnetic transition temperature (TC) up to 50K and spontaneous magnetization up to 2.9 μB per Mn. The other advantage of new DMS over III-V DMSs is the availability of bulk specimens so far for these type of DMS Moreover the new DMS shows a soft magnetic behavior with the coercive force < 100Oe which would be promising for prospective application. Muon spin relaxtion (μSR) probed static magnetic order of full volume in the ferromagnetic region. Electrical transport properties showe Li1+y (Zn,Mn)As (y = 0.05-0.1) compounds have p-type carriers since excess Li substitutes Zn sites presumably[1].

UR - http://www.scopus.com/inward/record.url?scp=84873691611&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/400/3/032033

DO - 10.1088/1742-6596/400/3/032033

M3 - Conference article

AN - SCOPUS:84873691611

SN - 1742-6588

VL - 400

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - PART 3

M1 - 032033

T2 - 26th International Conference on Low Temperature Physics, LT 2011

Y2 - 10 August 2011 through 17 August 2011

ER -

A new type diluted magnetic semiconductor Li(Zn,Mn)As

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