A metasurface optical modulator using voltage-controlled population of quantum well states

Raktim Sarma, Salvatore Campione, Michael Goldflam, Joshua Shank, Jinhyun Noh, Loan T. Le, Michael D. Lange, Peide D. Ye, Joel Wendt, Isaac Ruiz, Stephen W. Howell, Michael Sinclair, Michael C. Wanke, Igal Brener

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

The ability to control the light-matter interaction with an external stimulus is a very active area of research since it creates exciting new opportunities for designing optoelectronic devices. Recently, plasmonic metasurfaces have proven to be suitable candidates for achieving a strong light-matter interaction with various types of optical transitions, including intersubband transitions (ISTs) in semiconductor quantum wells (QWs). For voltage modulation of the light-matter interaction, plasmonic metasurfaces coupled to ISTs offer unique advantages since the parameters determining the strength of the interaction can be independently engineered. In this work, we report a proof-of-concept demonstration of a new approach to voltage-tune the coupling between ISTs in QWs and a plasmonic metasurface. In contrast to previous approaches, the IST strength is here modified via control of the electron populations in QWs located in the near field of the metasurface. By turning on and off the ISTs in the semiconductor QWs, we observe a modulation of the optical response of the IST coupled metasurface due to modulation of the coupled light-matter states. Because of the electrostatic design, our device exhibits an extremely low leakage current of ∼6 pA at a maximum operating bias of +1 V and therefore very low power dissipation. Our approach provides a new direction for designing voltage-tunable metasurface-based optical modulators.

Original languageEnglish
Article number201101
JournalApplied Physics Letters
Volume113
Issue number20
DOIs
StatePublished - Nov 12 2018
Externally publishedYes

Funding

This work was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering and performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multi-mission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International, Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under Contract No. DE-NA0003525. This paper describes objective technical results and analysis. Any subjective views or opinions that might be expressed in this paper do not necessarily represent the views of the U.S. Department of Energy or the United States Government.

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