A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon

Ruijing Ge; Xiaohan Wu; Liangbo Liang; Saban M. Hus; Yuqian Gu; Emmanuel Okogbue; Harry Chou; Jianping Shi; Yanfeng Zhang; Sanjay K. Banerjee; Yeonwoong Jung; Jack C. Lee; Deji Akinwande

doi:10.1002/adma.202007792

A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon

Ruijing Ge, Xiaohan Wu, Liangbo Liang, Saban M. Hus, Yuqian Gu, Emmanuel Okogbue, Harry Chou, Jianping Shi, Yanfeng Zhang, Sanjay K. Banerjee, Yeonwoong Jung, Jack C. Lee, Deji Akinwande

Nanomaterials Theory Institute

Research output: Contribution to journal › Article › peer-review

92 Scopus citations

Abstract

Non-volatile resistive switching (NVRS) is a widely available effect in transitional metal oxides, colloquially known as memristors, and of broad interest for memory technology and neuromorphic computing. Until recently, NVRS was not known in other transitional metal dichalcogenides (TMDs), an important material class owing to their atomic thinness enabling the ultimate dimensional scaling. Here, various monolayer or few-layer 2D materials are presented in the conventional vertical structure that exhibit NVRS, including TMDs (MX₂, M = transitional metal, e.g., Mo, W, Re, Sn, or Pt; X = chalcogen, e.g., S, Se, or Te), TMD heterostructure (WS₂/MoS₂), and an atomically thin insulator (h-BN). These results indicate the universality of the phenomenon in 2D non-conductive materials, and feature low switching voltage, large ON/OFF ratio, and forming-free characteristic. A dissociation–diffusion–adsorption model is proposed, attributing the enhanced conductance to metal atoms/ions adsorption into intrinsic vacancies, a conductive-point mechanism supported by first-principle calculations and scanning tunneling microscopy characterizations. The results motivate further research in the understanding and applications of defects in 2D materials.

Original language	English
Article number	2007792
Journal	Advanced Materials
Volume	33
Issue number	7
DOIs	https://doi.org/10.1002/adma.202007792
State	Published - Feb 18 2021

Funding

The authors thank Dr. Hanglin Ye for schematics rendering in Figure 4 . The authors thank Dr. An‐Ping Li and Dr. Wonhee Ko for their help with STM measurements. This work was supported in part by the National Science Foundation (NSF) grant #1809017. The authors acknowledge use of Texas Nanofabrication Facilities supported by the NSF NNCI award #1542159. D.A. acknowledges the Presidential Early Career Award for Scientists and Engineers (PECASE) through the Army Research Office (W911NF‐16‐1‐0277). Portion of this research (STM and theoretical calculations) used resources at the Center for Nanophase Materials Sciences, which is a U.S. Department of Energy Office of Science User Facility. L.L. acknowledges computational resources of the Compute and Data Environment for Science (CADES) at the Oak Ridge National Laboratory, which is supported by the Office of Science of the U.S. Department of Energy under Contract No. DE‐AC05‐00OR22725. Y.J. acknowledges supports from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry and Energy (MOTIE) of the Republic of Korea (No. 20173010013340) and the VPR Advancement of Early Career Researchers award from the University of Central Florida. Y.Z. and J.S. acknowledge the financial support from the National Key Research and Development Program of China (2018YFA0703700) and National Natural Science Foundation of China (51925201).

Funders	Funder number
CADES
Data Environment for Science
National Science Foundation	1542159, 1809017
U.S. Department of Energy	DE‐AC05‐00OR22725
Army Research Office	W911NF‐16‐1‐0277
Office of Science
University of Central Florida
National Natural Science Foundation of China	51925201
Ministry of Trade, Industry and Energy	20173010013340
Korea Institute of Energy Technology Evaluation and Planning
National Key Research and Development Program of China	2018YFA0703700

Keywords

2D materials
atomristors
memristors
resistive switching

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10.1002/adma.202007792

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abstract = "Non-volatile resistive switching (NVRS) is a widely available effect in transitional metal oxides, colloquially known as memristors, and of broad interest for memory technology and neuromorphic computing. Until recently, NVRS was not known in other transitional metal dichalcogenides (TMDs), an important material class owing to their atomic thinness enabling the ultimate dimensional scaling. Here, various monolayer or few-layer 2D materials are presented in the conventional vertical structure that exhibit NVRS, including TMDs (MX2, M = transitional metal, e.g., Mo, W, Re, Sn, or Pt; X = chalcogen, e.g., S, Se, or Te), TMD heterostructure (WS2/MoS2), and an atomically thin insulator (h-BN). These results indicate the universality of the phenomenon in 2D non-conductive materials, and feature low switching voltage, large ON/OFF ratio, and forming-free characteristic. A dissociation–diffusion–adsorption model is proposed, attributing the enhanced conductance to metal atoms/ions adsorption into intrinsic vacancies, a conductive-point mechanism supported by first-principle calculations and scanning tunneling microscopy characterizations. The results motivate further research in the understanding and applications of defects in 2D materials.",

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AU - Hus, Saban M.

AU - Gu, Yuqian

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AB - Non-volatile resistive switching (NVRS) is a widely available effect in transitional metal oxides, colloquially known as memristors, and of broad interest for memory technology and neuromorphic computing. Until recently, NVRS was not known in other transitional metal dichalcogenides (TMDs), an important material class owing to their atomic thinness enabling the ultimate dimensional scaling. Here, various monolayer or few-layer 2D materials are presented in the conventional vertical structure that exhibit NVRS, including TMDs (MX2, M = transitional metal, e.g., Mo, W, Re, Sn, or Pt; X = chalcogen, e.g., S, Se, or Te), TMD heterostructure (WS2/MoS2), and an atomically thin insulator (h-BN). These results indicate the universality of the phenomenon in 2D non-conductive materials, and feature low switching voltage, large ON/OFF ratio, and forming-free characteristic. A dissociation–diffusion–adsorption model is proposed, attributing the enhanced conductance to metal atoms/ions adsorption into intrinsic vacancies, a conductive-point mechanism supported by first-principle calculations and scanning tunneling microscopy characterizations. The results motivate further research in the understanding and applications of defects in 2D materials.

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A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon

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