A high-K ferroelectric relaxor terpolymer as a gate dielectric for organic thin film transistors

Shan Wu; Ming Shao; Quinn Burlingame; Xiangzhong Chen; Minren Lin; Kai Xiao; Q. M. Zhang

doi:10.1063/1.4773186

A high-K ferroelectric relaxor terpolymer as a gate dielectric for organic thin film transistors

Shan Wu, Ming Shao, Quinn Burlingame, Xiangzhong Chen, Minren Lin, Kai Xiao, Q. M. Zhang

Functional Hybrid Nanomaterials

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

Poly(vinylidenefluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)) is a ferroelectric terpolymer relaxor with a static dielectric constant of 50, which was developed using defect modification to eliminate remnant polarization in the normal ferroelectric PVDF. In this work, this solution processable terpolymer was used as the gate insulator in bottom gated organic thin-film transistors with a pentacene semiconductor layer. Due to the high dielectric constant of P(VDF-TrFE-CFE), a large capacitive coupling between the gate and channel can be achieved which causes a high charge concentration at the interface of the semiconductor and dielectric layers. In this device, an on/off ratio of 10⁴ and a low minimum operation gate voltage (5-10 V) were attained.

Original language	English
Article number	013301
Journal	Applied Physics Letters
Volume	102
Issue number	1
DOIs	https://doi.org/10.1063/1.4773186
State	Published - Jan 7 2013

Funding

This work was conducted at the Center for Nanophase Materials Sciences, which is supported by Oak Ridge National Laboratory under CNMS Proposal No. CNMS2011-229, and a portion of research was supported by the Office of Naval Research under Grant No. N00014-11-1-0192.

Access to Document

10.1063/1.4773186

Cite this

@article{7d11e34d30634f6d88aa9ebc89890a5c,

title = "A high-K ferroelectric relaxor terpolymer as a gate dielectric for organic thin film transistors",

abstract = "Poly(vinylidenefluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)) is a ferroelectric terpolymer relaxor with a static dielectric constant of 50, which was developed using defect modification to eliminate remnant polarization in the normal ferroelectric PVDF. In this work, this solution processable terpolymer was used as the gate insulator in bottom gated organic thin-film transistors with a pentacene semiconductor layer. Due to the high dielectric constant of P(VDF-TrFE-CFE), a large capacitive coupling between the gate and channel can be achieved which causes a high charge concentration at the interface of the semiconductor and dielectric layers. In this device, an on/off ratio of 104 and a low minimum operation gate voltage (5-10 V) were attained.",

author = "Shan Wu and Ming Shao and Quinn Burlingame and Xiangzhong Chen and Minren Lin and Kai Xiao and Zhang, {Q. M.}",

year = "2013",

month = jan,

day = "7",

doi = "10.1063/1.4773186",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - A high-K ferroelectric relaxor terpolymer as a gate dielectric for organic thin film transistors

AU - Wu, Shan

AU - Shao, Ming

AU - Burlingame, Quinn

AU - Chen, Xiangzhong

AU - Lin, Minren

AU - Xiao, Kai

AU - Zhang, Q. M.

PY - 2013/1/7

Y1 - 2013/1/7

N2 - Poly(vinylidenefluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)) is a ferroelectric terpolymer relaxor with a static dielectric constant of 50, which was developed using defect modification to eliminate remnant polarization in the normal ferroelectric PVDF. In this work, this solution processable terpolymer was used as the gate insulator in bottom gated organic thin-film transistors with a pentacene semiconductor layer. Due to the high dielectric constant of P(VDF-TrFE-CFE), a large capacitive coupling between the gate and channel can be achieved which causes a high charge concentration at the interface of the semiconductor and dielectric layers. In this device, an on/off ratio of 104 and a low minimum operation gate voltage (5-10 V) were attained.

AB - Poly(vinylidenefluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)) is a ferroelectric terpolymer relaxor with a static dielectric constant of 50, which was developed using defect modification to eliminate remnant polarization in the normal ferroelectric PVDF. In this work, this solution processable terpolymer was used as the gate insulator in bottom gated organic thin-film transistors with a pentacene semiconductor layer. Due to the high dielectric constant of P(VDF-TrFE-CFE), a large capacitive coupling between the gate and channel can be achieved which causes a high charge concentration at the interface of the semiconductor and dielectric layers. In this device, an on/off ratio of 104 and a low minimum operation gate voltage (5-10 V) were attained.

UR - http://www.scopus.com/inward/record.url?scp=84872279202&partnerID=8YFLogxK

U2 - 10.1063/1.4773186

DO - 10.1063/1.4773186

M3 - Article

AN - SCOPUS:84872279202

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 013301

ER -

A high-K ferroelectric relaxor terpolymer as a gate dielectric for organic thin film transistors

Abstract

Funding

Access to Document

Other files and links

Fingerprint

Cite this