A High-Accuracy Power Loss Model of SiC MOSFETs in Current Source Inverter Considering Current Commutation and Parasitic Parameters

Feida Chen; Sangwhee Lee; Thomas M. Jahns; Bulent Sarlioglu

doi:10.1109/ECCE50734.2022.9947464

A High-Accuracy Power Loss Model of SiC MOSFETs in Current Source Inverter Considering Current Commutation and Parasitic Parameters

Feida Chen, Sangwhee Lee, Thomas M. Jahns, Bulent Sarlioglu

Electric Drives Research

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Power loss estimation of power electronic devices is important to the efficiency optimization of motor drives used in many applications. However, most existing simplified power loss models of silicon carbide (SiC) MOSFETs are not sufficiently accurate due to their neglect of parasitic parameters in the current commutation loop. In addition, the loss model of the voltage source inverter (VSI) cannot be directly applied to the current source inverter (CSI) because of differences between their commutation loops. First, the commutation processes for VSIs and CSIs are compared. The voltage and current trajectories of SiC MOSFETs in the switching transition of a CSI-based motor drive system are analyzed in detail. Based on these results, the conduction and switching losses of SiC MOSFETs in CSIs are modeled considering the current commutation details. In addition, the proposed analytical model includes parasitic inductances and capacitances in the current commutation loop. Experimental results have verified that the proposed power loss model delivers higher accuracy loss predictions than the conventional loss model.

Original language	English
Title of host publication	2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728193878
DOIs	https://doi.org/10.1109/ECCE50734.2022.9947464
State	Published - 2022
Event	2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022 - Detroit, United States Duration: Oct 9 2022 → Oct 13 2022

Publication series

Name	2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022

Conference

Conference	2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022
Country/Territory	United States
City	Detroit
Period	10/9/22 → 10/13/22

Funding

ACKNOWLEDGMENT This material is based on work supported by the U.S. Department of Energy's Office of Energy Efficiency and Renewable Energy (EERE) under the Vehicle Technologies Office (VTO), Award Number DE-EE0008704. The authors also gratefully acknowledge the support of the Wisconsin Electric Machines and Power Electronics Consortium (WEMPEC). This material is based on work supported by the U.S. Department of Energy's Office of Energy Efficiency and Renewable Energy (EERE) under the Vehicle Technologies Office (VTO), Award Number DE-EE0008704. The authors also gratefully acknowledge the support of the Wisconsin Electric Machines and Power Electronics Consortium (WEMPEC).

Keywords

SiC power MOSFETs
current commutation
current source inverter
parasitic parameters
power loss model

Access to Document

10.1109/ECCE50734.2022.9947464

Cite this

Chen, F., Lee, S., Jahns, T. M., & Sarlioglu, B. (2022). A High-Accuracy Power Loss Model of SiC MOSFETs in Current Source Inverter Considering Current Commutation and Parasitic Parameters. In 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022 (2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECCE50734.2022.9947464

Chen, Feida ; Lee, Sangwhee ; Jahns, Thomas M. et al. / A High-Accuracy Power Loss Model of SiC MOSFETs in Current Source Inverter Considering Current Commutation and Parasitic Parameters. 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022).

@inproceedings{f310242c36fa461a9913003b8ef185bd,

title = "A High-Accuracy Power Loss Model of SiC MOSFETs in Current Source Inverter Considering Current Commutation and Parasitic Parameters",

abstract = "Power loss estimation of power electronic devices is important to the efficiency optimization of motor drives used in many applications. However, most existing simplified power loss models of silicon carbide (SiC) MOSFETs are not sufficiently accurate due to their neglect of parasitic parameters in the current commutation loop. In addition, the loss model of the voltage source inverter (VSI) cannot be directly applied to the current source inverter (CSI) because of differences between their commutation loops. First, the commutation processes for VSIs and CSIs are compared. The voltage and current trajectories of SiC MOSFETs in the switching transition of a CSI-based motor drive system are analyzed in detail. Based on these results, the conduction and switching losses of SiC MOSFETs in CSIs are modeled considering the current commutation details. In addition, the proposed analytical model includes parasitic inductances and capacitances in the current commutation loop. Experimental results have verified that the proposed power loss model delivers higher accuracy loss predictions than the conventional loss model.",

keywords = "SiC power MOSFETs, current commutation, current source inverter, parasitic parameters, power loss model",

author = "Feida Chen and Sangwhee Lee and Jahns, \{Thomas M.\} and Bulent Sarlioglu",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022 ; Conference date: 09-10-2022 Through 13-10-2022",

year = "2022",

doi = "10.1109/ECCE50734.2022.9947464",

language = "English",

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Chen, F, Lee, S, Jahns, TM & Sarlioglu, B 2022, A High-Accuracy Power Loss Model of SiC MOSFETs in Current Source Inverter Considering Current Commutation and Parasitic Parameters. in 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022. 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022, Institute of Electrical and Electronics Engineers Inc., 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022, Detroit, United States, 10/9/22. https://doi.org/10.1109/ECCE50734.2022.9947464

A High-Accuracy Power Loss Model of SiC MOSFETs in Current Source Inverter Considering Current Commutation and Parasitic Parameters. / Chen, Feida; Lee, Sangwhee; Jahns, Thomas M. et al.
2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chen, Feida

AU - Lee, Sangwhee

AU - Jahns, Thomas M.

AU - Sarlioglu, Bulent

PY - 2022

Y1 - 2022

N2 - Power loss estimation of power electronic devices is important to the efficiency optimization of motor drives used in many applications. However, most existing simplified power loss models of silicon carbide (SiC) MOSFETs are not sufficiently accurate due to their neglect of parasitic parameters in the current commutation loop. In addition, the loss model of the voltage source inverter (VSI) cannot be directly applied to the current source inverter (CSI) because of differences between their commutation loops. First, the commutation processes for VSIs and CSIs are compared. The voltage and current trajectories of SiC MOSFETs in the switching transition of a CSI-based motor drive system are analyzed in detail. Based on these results, the conduction and switching losses of SiC MOSFETs in CSIs are modeled considering the current commutation details. In addition, the proposed analytical model includes parasitic inductances and capacitances in the current commutation loop. Experimental results have verified that the proposed power loss model delivers higher accuracy loss predictions than the conventional loss model.

AB - Power loss estimation of power electronic devices is important to the efficiency optimization of motor drives used in many applications. However, most existing simplified power loss models of silicon carbide (SiC) MOSFETs are not sufficiently accurate due to their neglect of parasitic parameters in the current commutation loop. In addition, the loss model of the voltage source inverter (VSI) cannot be directly applied to the current source inverter (CSI) because of differences between their commutation loops. First, the commutation processes for VSIs and CSIs are compared. The voltage and current trajectories of SiC MOSFETs in the switching transition of a CSI-based motor drive system are analyzed in detail. Based on these results, the conduction and switching losses of SiC MOSFETs in CSIs are modeled considering the current commutation details. In addition, the proposed analytical model includes parasitic inductances and capacitances in the current commutation loop. Experimental results have verified that the proposed power loss model delivers higher accuracy loss predictions than the conventional loss model.

KW - SiC power MOSFETs

KW - current commutation

KW - current source inverter

KW - parasitic parameters

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PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 9 October 2022 through 13 October 2022

ER -

Chen F, Lee S, Jahns TM, Sarlioglu B. A High-Accuracy Power Loss Model of SiC MOSFETs in Current Source Inverter Considering Current Commutation and Parasitic Parameters. In 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022). doi: 10.1109/ECCE50734.2022.9947464

A High-Accuracy Power Loss Model of SiC MOSFETs in Current Source Inverter Considering Current Commutation and Parasitic Parameters

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