A Half-Bridge On-State Voltage Sensor for In-Situ Measurements

Chondon Roy; Namwon Kim; Daniel Evans; Ali Parsa Sirat; James Gafford; Babak Parkhideh

doi:10.1109/ECCE50734.2022.9947787

A Half-Bridge On-State Voltage Sensor for In-Situ Measurements

Chondon Roy, Namwon Kim, Daniel Evans, Ali Parsa Sirat, James Gafford, Babak Parkhideh

Power Electronics Systems Integration

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

Current prognostics for life expectancy of power semiconductors utilize off-line measurements of the on-state resistance. Presented is a half-bridge (HB) on-state voltage (VON) sensor capable of being utilized for in-situ measurements enabling continuous and real-time monitoring of the on-state resistance. The design provides a single VON measurement output that contains independent VON information of both high and low side devices in a HB leg. The measurement output is referenced from the middle point of the HB and combines the two complementary VON sensing outputs. This system reduces the number of components, required number of analog signal processing circuits, and ADC channels for in-situ health monitoring of a power electronics system. These reductions will facilitate integration of the VON sensor with the gate driver board and achieve low system profile. The experimental results demonstrate the proposed VON measurements while switching with inductive and resistive loads.

Original language	English
Title of host publication	2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728193878
DOIs	https://doi.org/10.1109/ECCE50734.2022.9947787
State	Published - 2022
Event	2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022 - Detroit, United States Duration: Oct 9 2022 → Oct 13 2022

Publication series

Name	2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022

Conference

Conference	2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022
Country/Territory	United States
City	Detroit
Period	10/9/22 → 10/13/22

Funding

ACKNOWLEDGMENT This project was supported by Oak Ridge National Laboratory (ORNL) funded through the Department of Energy (DOE) - Office of Electricity's (OE), Transformer Resilience and Advanced Components (TRAC) program led by the program manager Andre Pereira. The authors would also like to thank the Energy Production and Infrastructure Center (EPIC) and Electrical and Computer Engineering Department at the University of North Carolina at Charlotte. This project was supported by Oak Ridge National Laboratory (ORNL) funded through the Department of Energy (DOE) - Office of Electricity's (OE), Transformer Resilience and Advanced Components (TRAC) program led by the program manager Andre Pereira. The authors would also like to thank the Energy Production and Infrastructure Center (EPIC) and Electrical and Computer Engineering Department at the University of North Carolina at Charlotte.

Keywords

gallium nitride
half-bridge on-state voltage sensor
health monitoring
on-state resistance
on-state voltage
prognostics
reliability
silicon carbide

Access to Document

10.1109/ECCE50734.2022.9947787

Cite this

Roy, C., Kim, N., Evans, D., Sirat, A. P., Gafford, J., & Parkhideh, B. (2022). A Half-Bridge On-State Voltage Sensor for In-Situ Measurements. In 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022 (2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECCE50734.2022.9947787

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title = "A Half-Bridge On-State Voltage Sensor for In-Situ Measurements",

abstract = "Current prognostics for life expectancy of power semiconductors utilize off-line measurements of the on-state resistance. Presented is a half-bridge (HB) on-state voltage (VON) sensor capable of being utilized for in-situ measurements enabling continuous and real-time monitoring of the on-state resistance. The design provides a single VON measurement output that contains independent VON information of both high and low side devices in a HB leg. The measurement output is referenced from the middle point of the HB and combines the two complementary VON sensing outputs. This system reduces the number of components, required number of analog signal processing circuits, and ADC channels for in-situ health monitoring of a power electronics system. These reductions will facilitate integration of the VON sensor with the gate driver board and achieve low system profile. The experimental results demonstrate the proposed VON measurements while switching with inductive and resistive loads.",

keywords = "gallium nitride, half-bridge on-state voltage sensor, health monitoring, on-state resistance, on-state voltage, prognostics, reliability, silicon carbide",

author = "Chondon Roy and Namwon Kim and Daniel Evans and Sirat, {Ali Parsa} and James Gafford and Babak Parkhideh",

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doi = "10.1109/ECCE50734.2022.9947787",

language = "English",

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Roy, C, Kim, N, Evans, D, Sirat, AP, Gafford, J & Parkhideh, B 2022, A Half-Bridge On-State Voltage Sensor for In-Situ Measurements. in 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022. 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022, Institute of Electrical and Electronics Engineers Inc., 2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022, Detroit, United States, 10/9/22. https://doi.org/10.1109/ECCE50734.2022.9947787

A Half-Bridge On-State Voltage Sensor for In-Situ Measurements. / Roy, Chondon; Kim, Namwon; Evans, Daniel et al.
2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - Current prognostics for life expectancy of power semiconductors utilize off-line measurements of the on-state resistance. Presented is a half-bridge (HB) on-state voltage (VON) sensor capable of being utilized for in-situ measurements enabling continuous and real-time monitoring of the on-state resistance. The design provides a single VON measurement output that contains independent VON information of both high and low side devices in a HB leg. The measurement output is referenced from the middle point of the HB and combines the two complementary VON sensing outputs. This system reduces the number of components, required number of analog signal processing circuits, and ADC channels for in-situ health monitoring of a power electronics system. These reductions will facilitate integration of the VON sensor with the gate driver board and achieve low system profile. The experimental results demonstrate the proposed VON measurements while switching with inductive and resistive loads.

AB - Current prognostics for life expectancy of power semiconductors utilize off-line measurements of the on-state resistance. Presented is a half-bridge (HB) on-state voltage (VON) sensor capable of being utilized for in-situ measurements enabling continuous and real-time monitoring of the on-state resistance. The design provides a single VON measurement output that contains independent VON information of both high and low side devices in a HB leg. The measurement output is referenced from the middle point of the HB and combines the two complementary VON sensing outputs. This system reduces the number of components, required number of analog signal processing circuits, and ADC channels for in-situ health monitoring of a power electronics system. These reductions will facilitate integration of the VON sensor with the gate driver board and achieve low system profile. The experimental results demonstrate the proposed VON measurements while switching with inductive and resistive loads.

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ER -

A Half-Bridge On-State Voltage Sensor for In-Situ Measurements

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Keywords

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