A Cryogenic Front-End Preamplifier Operating at 120 K for Bolometric Detector

A. Reza; V. Vatsa; M. S. Pose; A. Mazumdar; A. Garai; H. Krishnamoorthy; G. Gupta; V. Nanal; R. G. Pillay; A. Shrivastava

doi:10.1007/s10909-019-02318-z

A Cryogenic Front-End Preamplifier Operating at 120 K for Bolometric Detector

A. Reza, V. Vatsa, M. S. Pose, A. Mazumdar, A. Garai, H. Krishnamoorthy, G. Gupta, V. Nanal, R. G. Pillay, A. Shrivastava

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this paper, the design and test results of a front-end cryogenic amplifier for a bolometer detector are presented. The amplifier is implemented with two low-noise Si JFETs, where the first FET is configured as a source follower amplifier and the second FET provides a high dynamic resistance to keep the voltage gain very close to unity. A 3 dB bandwidth over a wide range from DC to 10 MHz is achieved in this design. The input voltage noise density is ~ 1.9 nV/√Hz at 300 K, which further reduces to 1.6 nV/√Hz at 120 K. The flicker corner frequency observed is below 50 Hz.

Original language	English
Pages (from-to)	200-205
Number of pages	6
Journal	Journal of Low Temperature Physics
Volume	199
Issue number	1-2
DOIs	https://doi.org/10.1007/s10909-019-02318-z
State	Published - Apr 1 2020
Externally published	Yes

Keywords

Bolometer detector
Cryogenic amplifier
Low-noise amplifier

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10.1007/s10909-019-02318-z

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title = "A Cryogenic Front-End Preamplifier Operating at 120 K for Bolometric Detector",

abstract = "In this paper, the design and test results of a front-end cryogenic amplifier for a bolometer detector are presented. The amplifier is implemented with two low-noise Si JFETs, where the first FET is configured as a source follower amplifier and the second FET provides a high dynamic resistance to keep the voltage gain very close to unity. A 3 dB bandwidth over a wide range from DC to 10 MHz is achieved in this design. The input voltage noise density is ~ 1.9 nV/√Hz at 300 K, which further reduces to 1.6 nV/√Hz at 120 K. The flicker corner frequency observed is below 50 Hz.",

keywords = "Bolometer detector, Cryogenic amplifier, Low-noise amplifier",

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AU - Reza, A.

AU - Vatsa, V.

AU - Pose, M. S.

AU - Mazumdar, A.

AU - Garai, A.

AU - Krishnamoorthy, H.

AU - Gupta, G.

AU - Nanal, V.

AU - Pillay, R. G.

AU - Shrivastava, A.

PY - 2020/4/1

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N2 - In this paper, the design and test results of a front-end cryogenic amplifier for a bolometer detector are presented. The amplifier is implemented with two low-noise Si JFETs, where the first FET is configured as a source follower amplifier and the second FET provides a high dynamic resistance to keep the voltage gain very close to unity. A 3 dB bandwidth over a wide range from DC to 10 MHz is achieved in this design. The input voltage noise density is ~ 1.9 nV/√Hz at 300 K, which further reduces to 1.6 nV/√Hz at 120 K. The flicker corner frequency observed is below 50 Hz.

AB - In this paper, the design and test results of a front-end cryogenic amplifier for a bolometer detector are presented. The amplifier is implemented with two low-noise Si JFETs, where the first FET is configured as a source follower amplifier and the second FET provides a high dynamic resistance to keep the voltage gain very close to unity. A 3 dB bandwidth over a wide range from DC to 10 MHz is achieved in this design. The input voltage noise density is ~ 1.9 nV/√Hz at 300 K, which further reduces to 1.6 nV/√Hz at 120 K. The flicker corner frequency observed is below 50 Hz.

KW - Bolometer detector

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A Cryogenic Front-End Preamplifier Operating at 120 K for Bolometric Detector

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Keywords

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