Abstract
This paper treats the natural convection in a layer of boron oxide, called a liquid encapsulant, which lies above a layer of a molten compound semiconductor (melt) between cold and hot vertical walls in a rectangular container with a steady horizontal magnetic field B. The magnetic field provides an electromagnetic (EM) damping of the molten semiconductor which is an excellent electrical conductor but has no direct effect on the motion of the liquid encapsulant. This study uses a Chebyshev spectral collocation method to investigate the coupling between the natural convection in the boron oxide and melt.
| Original language | English |
|---|---|
| Pages (from-to) | 810-816 |
| Number of pages | 7 |
| Journal | International Journal of Heat and Fluid Flow |
| Volume | 26 |
| Issue number | 5 |
| DOIs | |
| State | Published - Oct 2005 |
| Externally published | Yes |
Funding
This research was supported by the US Air Force Office of Scientific Research under grant FA9550-04-1-0249. The calculations were performed on the Cray X1 and the SGI Origin 3000 Complex provided by the DoD High Performance Computing Modernization Program under grant AFSNH2487 and on the IBM pSeries 690 provided by the National Computational Science Alliance under grant DMR030015.
| Funders | Funder number |
|---|---|
| National Computational Science Alliance | DMR030015 |
| U.S. Department of Defense | AFSNH2487 |
| Air Force Office of Scientific Research | FA9550-04-1-0249 |
| International Business Machines Corporation |
Keywords
- Computational model
- III-V Compounds
- Magnetic fields
- Semiconductor crystal growth