Abstract
To investigate and understand the thermal stability of the (103) surface of the Al/Si, Ga/Si, In/Si, Al/Ge, Ga/Ge, and In/Ge systems, in the present article we study well-annealed surfaces of the systems as well as those of the Ga/Si, Al/Ge, and Ga/Ge(001) systems by means of LEED and AES. The results show that the (103) surfaces of the Al/Ge and Ga/Ge systems are unstable while those of the other four III/IV(103) systems are very stable. On the basis of the atomic structure of the III/IV(103)1 × 1 surface and the covalent bond length of the involved elements, we suggest that this is because group-III atoms would induce significant tensile stresses to the surface of the Al/Ge and Ga/Ge systems, while tensile stresses around group-III atoms are not favored by the III/IV systems.
| Original language | English |
|---|---|
| Pages (from-to) | 276-282 |
| Number of pages | 7 |
| Journal | Surface Science |
| Volume | 384 |
| Issue number | 1-3 |
| DOIs | |
| State | Published - Jul 20 1997 |
| Externally published | Yes |
Funding
This work was supported by the National Natural Science Foundation of China and the Doctoral Program Foundationo f the Education Ministry of China.
Keywords
- Aluminum
- Faceting
- Gallium
- Germanium
- Indium
- Low-energy electron diffraction
- Silicon
- Surface reconstruction