Abstract
Silicon carbide (SiC) power devices are expected to have an impact on power converter efficiency, weight, volume, and reliability. Currently, only SiC Schottky diodes are commercially available at relatively low current ratings. Oak Ridge National Laboratory has collaborated with Cree and Semikron to build a Si insulated-gate bipolar transistor-SiC Schottky diode hybrid 55-kW inverter by replacing the Si p-n diodes in Semikron's automotive inverter with Cree's made-to-order higher current SiC Schottky diodes. This paper presents the developed models of these diodes for circuit simulators, shows inverter test results, and compares the results with those of a similar all-Si inverter.
| Original language | English |
|---|---|
| Pages (from-to) | 278-285 |
| Number of pages | 8 |
| Journal | IEEE Transactions on Industry Applications |
| Volume | 45 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2009 |
Funding
Prepared by the Oak Ridge National Laboratory, Oak Ridge, TN 37831, managed by UT-Battelle for the U.S. Department of Energy under Contract DE-AC05-00OR22725. Mr. Kashyap is the recipient of the Sam Walton Doctoral Academy Fellowship and the William E. Clark Endowed Doctoral Fellowship.
| Funders | Funder number |
|---|---|
| Sam Walton Doctoral Academy | |
| William E. Clark Endowed | |
| U.S. Department of Energy | DE-AC05-00OR22725 |
| UT-Battelle |
Keywords
- DC-AC conversion
- Hybrid electric vehicle
- Insulated-gate bipolar transistors (IGBTs)
- Inverter
- Schottky diode
- Silicon carbide (SiC)
