TY - GEN
T1 - A 55 kW three-phase inverter with Si IGBTs and SiC schottky diodes
AU - Ozpineci, Burak
AU - Chinthavali, Madhu S.
AU - Tolbert, Leon M.
AU - Kashyap, Avinash
AU - Mantooth, H. Alan
PY - 2006
Y1 - 2006
N2 - Silicon carbide (SiC) power devices are expected to have an impact on power converter efficiency, weight, volume, and reliability. Presently, only SiC Schottky diodes are commercially available at relatively low current ratings. Oak Ridge National Laboratory has collaborated with Cree and Semikron to build a Si IGBT- SiC Schottky diode hybrid 55kW inverter by replacing the Si pn diodes in Semikron's automotive inverter with Cree's made-to-order higher current SiC Schottky diodes. This paper presents the developed models of these diodes for circuit simulators, shows inverter test results, and compares the results to those of a similar all-Si inverter.
AB - Silicon carbide (SiC) power devices are expected to have an impact on power converter efficiency, weight, volume, and reliability. Presently, only SiC Schottky diodes are commercially available at relatively low current ratings. Oak Ridge National Laboratory has collaborated with Cree and Semikron to build a Si IGBT- SiC Schottky diode hybrid 55kW inverter by replacing the Si pn diodes in Semikron's automotive inverter with Cree's made-to-order higher current SiC Schottky diodes. This paper presents the developed models of these diodes for circuit simulators, shows inverter test results, and compares the results to those of a similar all-Si inverter.
UR - http://www.scopus.com/inward/record.url?scp=33749519667&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:33749519667
SN - 0780395476
SN - 9780780395473
T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
SP - 448
EP - 454
BT - Twenty-First Annual IEEE Applied Power Electronics Conference and Exposition, APEC '06
T2 - 21st Annual IEEE Applied Power Electronics Conference and Exposition, APEC '06
Y2 - 19 March 2006 through 23 March 2006
ER -