A 4H silicon carbide gate buffer for integrated power systems

Nance Ericson; Shane Frank; Chuck Britton; Laura Marlino; Sei Hyung Ryu; Dave Grider; Alan Mantooth; Matt Francis; Ranjan Lamichhane; Mihir Mudholkar; Paul Shepherd; Michael Glover; Javier Valle-Mayorga; T. McNutt; Adam Barkley; Bret Whitaker; Zach Cole; Brandon Passmore; Alex Lostetter

doi:10.1109/TPEL.2013.2271906

A 4H silicon carbide gate buffer for integrated power systems

Nance Ericson, Shane Frank, Chuck Britton, Laura Marlino, Sei Hyung Ryu, Dave Grider, Alan Mantooth, Matt Francis, Ranjan Lamichhane, Mihir Mudholkar, Paul Shepherd, Michael Glover, Javier Valle-Mayorga, T. McNutt, Adam Barkley, Bret Whitaker, Zach Cole, Brandon Passmore, Alex Lostetter

Sensors and Electronics

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

A gate buffer fabricated in a 2-μm 4H silicon carbide (SiC) process is presented. The circuit is composed of an input buffer stage with a push-pull output stage, and is fabricated using enhancement mode N-channel FETs in a process optimized for SiC power switching devices. Simulation and measurement results of the fabricated gate buffer are presented and compared for operation at various voltage supply levels, with a capacitive load of 2 nF. Details of the design including layout specifics, simulation results, and directions for future improvement of this buffer are presented. In addition, plans for its incorporation into an isolated high-side/low-side gate-driver architecture, fully integrated with power switching devices in a SiC process, are briefly discussed. This letter represents the first reported MOSFET-based gate buffer fabricated in 4H SiC.

Original language	English
Article number	6555951
Pages (from-to)	539-542
Number of pages	4
Journal	IEEE Transactions on Power Electronics
Volume	29
Issue number	2
DOIs	https://doi.org/10.1109/TPEL.2013.2271906
State	Published - 2014

Keywords

4H-SiC
Gate buffer
gate driver
high-temperature electronics
silicon carbide (SiC)

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10.1109/TPEL.2013.2271906

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Ericson, N., Frank, S., Britton, C., Marlino, L., Ryu, S. H., Grider, D., Mantooth, A., Francis, M., Lamichhane, R., Mudholkar, M., Shepherd, P., Glover, M., Valle-Mayorga, J., McNutt, T., Barkley, A., Whitaker, B., Cole, Z., Passmore, B., & Lostetter, A. (2014). A 4H silicon carbide gate buffer for integrated power systems. IEEE Transactions on Power Electronics, 29(2), 539-542. Article 6555951. https://doi.org/10.1109/TPEL.2013.2271906

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title = "A 4H silicon carbide gate buffer for integrated power systems",

abstract = "A gate buffer fabricated in a 2-μm 4H silicon carbide (SiC) process is presented. The circuit is composed of an input buffer stage with a push-pull output stage, and is fabricated using enhancement mode N-channel FETs in a process optimized for SiC power switching devices. Simulation and measurement results of the fabricated gate buffer are presented and compared for operation at various voltage supply levels, with a capacitive load of 2 nF. Details of the design including layout specifics, simulation results, and directions for future improvement of this buffer are presented. In addition, plans for its incorporation into an isolated high-side/low-side gate-driver architecture, fully integrated with power switching devices in a SiC process, are briefly discussed. This letter represents the first reported MOSFET-based gate buffer fabricated in 4H SiC.",

keywords = "4H-SiC, Gate buffer, gate driver, high-temperature electronics, silicon carbide (SiC)",

author = "Nance Ericson and Shane Frank and Chuck Britton and Laura Marlino and Ryu, {Sei Hyung} and Dave Grider and Alan Mantooth and Matt Francis and Ranjan Lamichhane and Mihir Mudholkar and Paul Shepherd and Michael Glover and Javier Valle-Mayorga and T. McNutt and Adam Barkley and Bret Whitaker and Zach Cole and Brandon Passmore and Alex Lostetter",

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doi = "10.1109/TPEL.2013.2271906",

language = "English",

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Ericson, N , Frank, S , Britton, C, Marlino, L, Ryu, SH, Grider, D, Mantooth, A, Francis, M, Lamichhane, R, Mudholkar, M, Shepherd, P, Glover, M, Valle-Mayorga, J, McNutt, T, Barkley, A, Whitaker, B, Cole, Z, Passmore, B & Lostetter, A 2014, 'A 4H silicon carbide gate buffer for integrated power systems', IEEE Transactions on Power Electronics, vol. 29, no. 2, 6555951, pp. 539-542. https://doi.org/10.1109/TPEL.2013.2271906

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T1 - A 4H silicon carbide gate buffer for integrated power systems

AU - Ericson, Nance

AU - Frank, Shane

AU - Britton, Chuck

AU - Marlino, Laura

AU - Ryu, Sei Hyung

AU - Grider, Dave

AU - Mantooth, Alan

AU - Francis, Matt

AU - Lamichhane, Ranjan

AU - Mudholkar, Mihir

AU - Shepherd, Paul

AU - Glover, Michael

AU - Valle-Mayorga, Javier

AU - McNutt, T.

AU - Barkley, Adam

AU - Whitaker, Bret

AU - Cole, Zach

AU - Passmore, Brandon

AU - Lostetter, Alex

PY - 2014

Y1 - 2014

N2 - A gate buffer fabricated in a 2-μm 4H silicon carbide (SiC) process is presented. The circuit is composed of an input buffer stage with a push-pull output stage, and is fabricated using enhancement mode N-channel FETs in a process optimized for SiC power switching devices. Simulation and measurement results of the fabricated gate buffer are presented and compared for operation at various voltage supply levels, with a capacitive load of 2 nF. Details of the design including layout specifics, simulation results, and directions for future improvement of this buffer are presented. In addition, plans for its incorporation into an isolated high-side/low-side gate-driver architecture, fully integrated with power switching devices in a SiC process, are briefly discussed. This letter represents the first reported MOSFET-based gate buffer fabricated in 4H SiC.

AB - A gate buffer fabricated in a 2-μm 4H silicon carbide (SiC) process is presented. The circuit is composed of an input buffer stage with a push-pull output stage, and is fabricated using enhancement mode N-channel FETs in a process optimized for SiC power switching devices. Simulation and measurement results of the fabricated gate buffer are presented and compared for operation at various voltage supply levels, with a capacitive load of 2 nF. Details of the design including layout specifics, simulation results, and directions for future improvement of this buffer are presented. In addition, plans for its incorporation into an isolated high-side/low-side gate-driver architecture, fully integrated with power switching devices in a SiC process, are briefly discussed. This letter represents the first reported MOSFET-based gate buffer fabricated in 4H SiC.

KW - 4H-SiC

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KW - gate driver

KW - high-temperature electronics

KW - silicon carbide (SiC)

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JO - IEEE Transactions on Power Electronics

JF - IEEE Transactions on Power Electronics

IS - 2

M1 - 6555951

ER -

A 4H silicon carbide gate buffer for integrated power systems

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Keywords

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