A 3nm GAAFET Analog Assisted Digital LDO with High Current Density for Dynamic Voltage Scaling Mobile Applications

Seki Kim; Hyongmin Lee; Yongjin Lee; Dongha Lee; Byeongbae Lee; Jahoon Jin; Susie Kim; Miri Noh; Kwonwoo Kang; Sangho Kim; Takahiro Nomiyama; Ji Seon Paek; Jongwoo Lee

doi:10.1109/VLSITechnologyandCir46769.2022.9830252

A 3nm GAAFET Analog Assisted Digital LDO with High Current Density for Dynamic Voltage Scaling Mobile Applications

Seki Kim, Hyongmin Lee, Yongjin Lee, Dongha Lee, Byeongbae Lee, Jahoon Jin, Susie Kim, Miri Noh, Kwonwoo Kang, Sangho Kim, Takahiro Nomiyama, Ji Seon Paek, Jongwoo Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

This paper presents an analog assisted digital LDO achieving high current density and fast response characteristic. A current comparator based control method enables over 10x ratio of digital current over analog current for high current density regardless of PVT condition. The proposed LDO in 3nm GAAFET CMOS technology demonstrated current density of 34.15A/mm2 and fast transient characteristic of 38mV droop at 1A/1ns load current condition.

Original language	English
Title of host publication	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	190-191
Number of pages	2
ISBN (Electronic)	9781665497725
DOIs	https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830252
State	Published - 2022
Externally published	Yes
Event	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 - Honolulu, United States Duration: Jun 12 2022 → Jun 17 2022

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2022-June
ISSN (Print)	0743-1562

Conference

Conference	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
Country/Territory	United States
City	Honolulu
Period	06/12/22 → 06/17/22

Keywords

DLDO
Digital LDO
analog assisted digital LDO
hybrid LDO

Access to Document

10.1109/VLSITechnologyandCir46769.2022.9830252

Cite this

Kim, S., Lee, H., Lee, Y., Lee, D., Lee, B., Jin, J., Kim, S., Noh, M., Kang, K., Kim, S., Nomiyama, T., Paek, J. S., & Lee, J. (2022). A 3nm GAAFET Analog Assisted Digital LDO with High Current Density for Dynamic Voltage Scaling Mobile Applications. In 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 (pp. 190-191). (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2022-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830252

Kim, Seki ; Lee, Hyongmin ; Lee, Yongjin et al. / A 3nm GAAFET Analog Assisted Digital LDO with High Current Density for Dynamic Voltage Scaling Mobile Applications. 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 190-191 (Digest of Technical Papers - Symposium on VLSI Technology).

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title = "A 3nm GAAFET Analog Assisted Digital LDO with High Current Density for Dynamic Voltage Scaling Mobile Applications",

abstract = "This paper presents an analog assisted digital LDO achieving high current density and fast response characteristic. A current comparator based control method enables over 10x ratio of digital current over analog current for high current density regardless of PVT condition. The proposed LDO in 3nm GAAFET CMOS technology demonstrated current density of 34.15A/mm2 and fast transient characteristic of 38mV droop at 1A/1ns load current condition.",

keywords = "DLDO, Digital LDO, analog assisted digital LDO, hybrid LDO",

author = "Seki Kim and Hyongmin Lee and Yongjin Lee and Dongha Lee and Byeongbae Lee and Jahoon Jin and Susie Kim and Miri Noh and Kwonwoo Kang and Sangho Kim and Takahiro Nomiyama and Paek, {Ji Seon} and Jongwoo Lee",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 ; Conference date: 12-06-2022 Through 17-06-2022",

year = "2022",

doi = "10.1109/VLSITechnologyandCir46769.2022.9830252",

language = "English",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "190--191",

booktitle = "2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022",

}

Kim, S, Lee, H, Lee, Y, Lee, D, Lee, B, Jin, J, Kim, S, Noh, M, Kang, K, Kim, S, Nomiyama, T, Paek, JS & Lee, J 2022, A 3nm GAAFET Analog Assisted Digital LDO with High Current Density for Dynamic Voltage Scaling Mobile Applications. in 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Digest of Technical Papers - Symposium on VLSI Technology, vol. 2022-June, Institute of Electrical and Electronics Engineers Inc., pp. 190-191, 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022, Honolulu, United States, 06/12/22. https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830252

A 3nm GAAFET Analog Assisted Digital LDO with High Current Density for Dynamic Voltage Scaling Mobile Applications. / Kim, Seki; Lee, Hyongmin; Lee, Yongjin et al.
2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 190-191 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2022-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A 3nm GAAFET Analog Assisted Digital LDO with High Current Density for Dynamic Voltage Scaling Mobile Applications

AU - Kim, Seki

AU - Lee, Hyongmin

AU - Lee, Yongjin

AU - Lee, Dongha

AU - Lee, Byeongbae

AU - Jin, Jahoon

AU - Kim, Susie

AU - Noh, Miri

AU - Kang, Kwonwoo

AU - Kim, Sangho

AU - Nomiyama, Takahiro

AU - Paek, Ji Seon

AU - Lee, Jongwoo

PY - 2022

Y1 - 2022

N2 - This paper presents an analog assisted digital LDO achieving high current density and fast response characteristic. A current comparator based control method enables over 10x ratio of digital current over analog current for high current density regardless of PVT condition. The proposed LDO in 3nm GAAFET CMOS technology demonstrated current density of 34.15A/mm2 and fast transient characteristic of 38mV droop at 1A/1ns load current condition.

AB - This paper presents an analog assisted digital LDO achieving high current density and fast response characteristic. A current comparator based control method enables over 10x ratio of digital current over analog current for high current density regardless of PVT condition. The proposed LDO in 3nm GAAFET CMOS technology demonstrated current density of 34.15A/mm2 and fast transient characteristic of 38mV droop at 1A/1ns load current condition.

KW - DLDO

KW - Digital LDO

KW - analog assisted digital LDO

KW - hybrid LDO

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U2 - 10.1109/VLSITechnologyandCir46769.2022.9830252

DO - 10.1109/VLSITechnologyandCir46769.2022.9830252

M3 - Conference contribution

AN - SCOPUS:85135226092

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 190

EP - 191

BT - 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022

Y2 - 12 June 2022 through 17 June 2022

ER -

Kim S, Lee H, Lee Y, Lee D, Lee B, Jin J et al. A 3nm GAAFET Analog Assisted Digital LDO with High Current Density for Dynamic Voltage Scaling Mobile Applications. In 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 190-191. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSITechnologyandCir46769.2022.9830252

A 3nm GAAFET Analog Assisted Digital LDO with High Current Density for Dynamic Voltage Scaling Mobile Applications

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Keywords

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