TY - JOUR
T1 - A 0.3V-VIN, 0.015ps-FoM Fully Integrated Analog-Assisted Digital LDO With Dual-Negative Gate Control and Adaptive Transient Recovery Path
AU - Park, Hyunjun
AU - Jung, Woojoong
AU - Kim, Minsu
AU - Kim, Seki
AU - Lee, Hyongmin
AU - Kim, Sangho
AU - Lee, Jongwoo
AU - Lee, Hyung Min
N1 - Publisher Copyright:
© 1986-2012 IEEE.
PY - 2023/1/1
Y1 - 2023/1/1
N2 - This letter presents a fully integrated analog-assisted (AA) digital low-dropout regulator (DLDO) to operate at low input voltage (VIN) with fast transient response. A negative voltage gate driver (NVGD) enables low-VDS triode operation and large current capacity of pass transistors even at low VIN of 0.3 V by utilizing a negative voltage. A dual negative voltage tank (DNVT) compensates for leakage in NVGD for reliable output regulation. An adaptive transient recovery path (ATRP) in AA loops expedites output voltage (VOUT) regulation against a large load current (ILOAD) step. The negative supply from DNVT also enhances inverter-based comparators in ATRP at low VIN. The proposed DLDO fabricated in a 28 nm complementary metal-oxide-semiconductor (CMOS) process operates at lowest VIN of 0.3 - 1 V with 50 mV dropout among state-of-the-art DLDOs. The DLDO consumes quiescent current of 23 μA, while providing large ILOAD up to 800 mA. The ATRP ensures small VOUT droop of 97 mV against ΔILOAD of 380 mA, achieving a low figure-of-merit (FoM) of 0.015 ps.
AB - This letter presents a fully integrated analog-assisted (AA) digital low-dropout regulator (DLDO) to operate at low input voltage (VIN) with fast transient response. A negative voltage gate driver (NVGD) enables low-VDS triode operation and large current capacity of pass transistors even at low VIN of 0.3 V by utilizing a negative voltage. A dual negative voltage tank (DNVT) compensates for leakage in NVGD for reliable output regulation. An adaptive transient recovery path (ATRP) in AA loops expedites output voltage (VOUT) regulation against a large load current (ILOAD) step. The negative supply from DNVT also enhances inverter-based comparators in ATRP at low VIN. The proposed DLDO fabricated in a 28 nm complementary metal-oxide-semiconductor (CMOS) process operates at lowest VIN of 0.3 - 1 V with 50 mV dropout among state-of-the-art DLDOs. The DLDO consumes quiescent current of 23 μA, while providing large ILOAD up to 800 mA. The ATRP ensures small VOUT droop of 97 mV against ΔILOAD of 380 mA, achieving a low figure-of-merit (FoM) of 0.015 ps.
KW - Adaptive transient recovery path (ATRP)
KW - analog-assisted (AA)
KW - digital low drop-out regulator (LDO)
KW - dual negative voltage tank (DNVT)
KW - low input voltage (V)
KW - negative voltage gate driver (NVGD)
UR - http://www.scopus.com/inward/record.url?scp=85137934196&partnerID=8YFLogxK
U2 - 10.1109/TPEL.2022.3204556
DO - 10.1109/TPEL.2022.3204556
M3 - Article
AN - SCOPUS:85137934196
SN - 0885-8993
VL - 38
SP - 85
EP - 89
JO - IEEE Transactions on Power Electronics
JF - IEEE Transactions on Power Electronics
IS - 1
ER -