Abstract
In this paper, we report the design and fabrication of 980-nm vertical-cavity surface-emitting lasers and arrays that provide high output power and low divergence angle without any additional collimating optics. The influence of the structure of the contact on the current density distribution inside the active region was analyzed using the 3-D finite-element method. Uniform current distribution is achieved by optimizing the diameter of the p-contact, and the consequent improvement in beam divergence and thermal behavior is shown. A low divergence angle of 5.4$ \circ is obtained for a single device with continuous-wave (CW) power of 1.46 W at room temperature. The 8$\,\times\,$8 array shows a divergence angle of 10.2$ \circ at 4 A with a CW power of 1.95 W. In addition, the measured results were compared with the results from devices without optimization of current density distribution.
| Original language | English |
|---|---|
| Article number | 6084697 |
| Pages (from-to) | 42-48 |
| Number of pages | 7 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 48 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2012 |
Funding
Manuscript received August 1, 2011; revised October 14, 2011; accepted November 11, 2011. Date of current version December 2, 2011. This work was supported in part by the National Natural Science Foundation of China, under Grant 10974012, Grant 60876036, and Grant 90923037.
Keywords
- High-power
- Low-divergence
- Semiconductor laser arrays
- Vertical-cavity surface-emitting lasers