808 nm kW-output high-efficiency diode laser sources

A kind of beam shaping technique was presented to improve the beam quality of a semiconductor laser and to achieve the beam splitting, translating, and rearranging by a parallel plate glass stack. The experiment uses a 20-layer 808 nm semiconductor laser array designed by ourselves with the output power of 60 W per bar, 19 light-emitting points of 1 μm×135 μm each and 30% filling factor to expand beam at a slow axis through a telescope system, and also uses a focusing lens to focus on both the slow axis and the fast one at the same time. Experiments show that the technique can achieve the 1 kW output power on the focal plane, focused spot of 1 mm×1 mm and coupling efficiency of 90%, which basically satisfies the needs of laser cladding and welding.