4H-SiC GTO thyristor and p-n diode loss models for HVDC converter

Madhu Sudhan Chinthavali; Leon M. Tolbert; Burak Ozpineci

doi:10.1109/IAS.2004.1348571

4H-SiC GTO thyristor and p-n diode loss models for HVDC converter

Madhu Sudhan Chinthavali, Leon M. Tolbert, Burak Ozpineci

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Abstract

The increase in use of power electronics in transmission and distribution applications is the driving force for development of high power devices. Utility applications like FACTS and HVDC require cost effective and highly efficient converters with high power ratings. SiC power devices have some exceptional physical properties that make them highly reliable at high power, high temperature, and high frequencies. This paper presents the modeling of temperature dependent 4H-SiC GTO thyristor and p-n diode loss models. The conduction and switching losses of the devices for various operating conditions have been simulated and compared for SiC and Si devices. These loss models are integrated with an HVDC transmission system to study the effect of Si and SiC devices on the system in terms of system efficiency and system cost management.

Original language	English
Title of host publication	Conference Record of the 2004 IEEE Industry Applications Conference; 39th IAS Annual Meeting
Pages	1238-1243
Number of pages	6
DOIs	https://doi.org/10.1109/IAS.2004.1348571
State	Published - 2004
Event	Conference Record of the 2004 IEEE Industry Applications Conference; 39th IAS Annual Meeting - Seattle, WA, United States Duration: Oct 3 2004 → Oct 7 2004

Publication series

Name	Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)
Volume	2
ISSN (Print)	0197-2618

Conference

Conference	Conference Record of the 2004 IEEE Industry Applications Conference; 39th IAS Annual Meeting
Country/Territory	United States
City	Seattle, WA
Period	10/3/04 → 10/7/04

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/IAS.2004.1348571

Cite this

@inproceedings{a052f6f5f3d84aa3b5fb64df18f05fcf,

title = "4H-SiC GTO thyristor and p-n diode loss models for HVDC converter",

abstract = "The increase in use of power electronics in transmission and distribution applications is the driving force for development of high power devices. Utility applications like FACTS and HVDC require cost effective and highly efficient converters with high power ratings. SiC power devices have some exceptional physical properties that make them highly reliable at high power, high temperature, and high frequencies. This paper presents the modeling of temperature dependent 4H-SiC GTO thyristor and p-n diode loss models. The conduction and switching losses of the devices for various operating conditions have been simulated and compared for SiC and Si devices. These loss models are integrated with an HVDC transmission system to study the effect of Si and SiC devices on the system in terms of system efficiency and system cost management.",

author = "Chinthavali, {Madhu Sudhan} and Tolbert, {Leon M.} and Burak Ozpineci",

year = "2004",

doi = "10.1109/IAS.2004.1348571",

language = "English",

isbn = "0780384865",

series = "Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)",

pages = "1238--1243",

booktitle = "Conference Record of the 2004 IEEE Industry Applications Conference; 39th IAS Annual Meeting",

note = "Conference Record of the 2004 IEEE Industry Applications Conference; 39th IAS Annual Meeting ; Conference date: 03-10-2004 Through 07-10-2004",

}

Chinthavali, MS, Tolbert, LM & Ozpineci, B 2004, 4H-SiC GTO thyristor and p-n diode loss models for HVDC converter. in Conference Record of the 2004 IEEE Industry Applications Conference; 39th IAS Annual Meeting. Conference Record - IAS Annual Meeting (IEEE Industry Applications Society), vol. 2, pp. 1238-1243, Conference Record of the 2004 IEEE Industry Applications Conference; 39th IAS Annual Meeting, Seattle, WA, United States, 10/3/04. https://doi.org/10.1109/IAS.2004.1348571

4H-SiC GTO thyristor and p-n diode loss models for HVDC converter. / Chinthavali, Madhu Sudhan; Tolbert, Leon M.; Ozpineci, Burak.
Conference Record of the 2004 IEEE Industry Applications Conference; 39th IAS Annual Meeting. 2004. p. 1238-1243 (Conference Record - IAS Annual Meeting (IEEE Industry Applications Society); Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - 4H-SiC GTO thyristor and p-n diode loss models for HVDC converter

AU - Chinthavali, Madhu Sudhan

AU - Tolbert, Leon M.

AU - Ozpineci, Burak

PY - 2004

Y1 - 2004

N2 - The increase in use of power electronics in transmission and distribution applications is the driving force for development of high power devices. Utility applications like FACTS and HVDC require cost effective and highly efficient converters with high power ratings. SiC power devices have some exceptional physical properties that make them highly reliable at high power, high temperature, and high frequencies. This paper presents the modeling of temperature dependent 4H-SiC GTO thyristor and p-n diode loss models. The conduction and switching losses of the devices for various operating conditions have been simulated and compared for SiC and Si devices. These loss models are integrated with an HVDC transmission system to study the effect of Si and SiC devices on the system in terms of system efficiency and system cost management.

AB - The increase in use of power electronics in transmission and distribution applications is the driving force for development of high power devices. Utility applications like FACTS and HVDC require cost effective and highly efficient converters with high power ratings. SiC power devices have some exceptional physical properties that make them highly reliable at high power, high temperature, and high frequencies. This paper presents the modeling of temperature dependent 4H-SiC GTO thyristor and p-n diode loss models. The conduction and switching losses of the devices for various operating conditions have been simulated and compared for SiC and Si devices. These loss models are integrated with an HVDC transmission system to study the effect of Si and SiC devices on the system in terms of system efficiency and system cost management.

UR - http://www.scopus.com/inward/record.url?scp=10944249688&partnerID=8YFLogxK

U2 - 10.1109/IAS.2004.1348571

DO - 10.1109/IAS.2004.1348571

M3 - Conference contribution

AN - SCOPUS:10944249688

SN - 0780384865

T3 - Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

SP - 1238

EP - 1243

BT - Conference Record of the 2004 IEEE Industry Applications Conference; 39th IAS Annual Meeting

T2 - Conference Record of the 2004 IEEE Industry Applications Conference; 39th IAS Annual Meeting

Y2 - 3 October 2004 through 7 October 2004

ER -

4H-SiC GTO thyristor and p-n diode loss models for HVDC converter

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