{310} faceting of the Ge(001) 2 × 1 surface induced by indium

Zheng Gai; Hang Ji; Yi He; Chuan Hu; R. G. Zhao; W. S. Yang

doi:10.1016/0039-6028(95)00661-3

{310} faceting of the Ge(001) 2 × 1 surface induced by indium

Zheng Gai, Hang Ji, Yi He, Chuan Hu, R. G. Zhao, W. S. Yang

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

In the present paper, by means of scanning tunneling microscopy, low-energy electron diffraction, and Auger electron spectroscopy, we have found and studied the {310} faceting induced by In on the Ge(001)2 × 1 surface. On the basis of the dual bias STM images a model, which contains one In atom and only one dangling bond in a unit cell, has been proposed for the atomic structure of the {310} facets. We suppose that the faceting process proceeds through expansion of many mini-{310}-facets in the cost of the original (001) surface, instead of via any other transient surface structures.

Original language	English
Pages (from-to)	L851-L856
Journal	Surface Science
Volume	338
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(95)00661-3
State	Published - Sep 10 1995
Externally published	Yes

Funding

This work was supported by the National Natural Science Foundation of China and the Doctoral Program Foundation of the Education Ministry of China.

Keywords

Germanium
Indium
Low energy electron diffraction (LEED)
Scanning tunneling microscopy
Surface relaxation and reconstruction

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10.1016/0039-6028(95)00661-3

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abstract = "In the present paper, by means of scanning tunneling microscopy, low-energy electron diffraction, and Auger electron spectroscopy, we have found and studied the {310} faceting induced by In on the Ge(001)2 × 1 surface. On the basis of the dual bias STM images a model, which contains one In atom and only one dangling bond in a unit cell, has been proposed for the atomic structure of the {310} facets. We suppose that the faceting process proceeds through expansion of many mini-{310}-facets in the cost of the original (001) surface, instead of via any other transient surface structures.",

keywords = "Germanium, Indium, Low energy electron diffraction (LEED), Scanning tunneling microscopy, Surface relaxation and reconstruction",

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T1 - {310} faceting of the Ge(001) 2 × 1 surface induced by indium

AU - Gai, Zheng

AU - Ji, Hang

AU - He, Yi

AU - Hu, Chuan

AU - Zhao, R. G.

AU - Yang, W. S.

PY - 1995/9/10

Y1 - 1995/9/10

N2 - In the present paper, by means of scanning tunneling microscopy, low-energy electron diffraction, and Auger electron spectroscopy, we have found and studied the {310} faceting induced by In on the Ge(001)2 × 1 surface. On the basis of the dual bias STM images a model, which contains one In atom and only one dangling bond in a unit cell, has been proposed for the atomic structure of the {310} facets. We suppose that the faceting process proceeds through expansion of many mini-{310}-facets in the cost of the original (001) surface, instead of via any other transient surface structures.

AB - In the present paper, by means of scanning tunneling microscopy, low-energy electron diffraction, and Auger electron spectroscopy, we have found and studied the {310} faceting induced by In on the Ge(001)2 × 1 surface. On the basis of the dual bias STM images a model, which contains one In atom and only one dangling bond in a unit cell, has been proposed for the atomic structure of the {310} facets. We suppose that the faceting process proceeds through expansion of many mini-{310}-facets in the cost of the original (001) surface, instead of via any other transient surface structures.

KW - Germanium

KW - Indium

KW - Low energy electron diffraction (LEED)

KW - Scanning tunneling microscopy

KW - Surface relaxation and reconstruction

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AN - SCOPUS:0029375529

SN - 0039-6028

VL - 338

SP - L851-L856

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

{310} faceting of the Ge(001) 2 × 1 surface induced by indium

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