26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-Sapphire (VOS) wafer

H. Madan; H. T. Zhang; M. Jerry; D. Mukherjee; N. Alem; R. Engel-Herbert; S. Datta

doi:10.1109/IEDM.2015.7409661

26.5 Terahertz electrically triggered RF switch on epitaxial VO₂-on-Sapphire (VOS) wafer

H. Madan
, H. T. Zhang
, M. Jerry
, D. Mukherjee
, N. Alem
, R. Engel-Herbert
, S. Datta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

31 Scopus citations

Abstract

An electrically triggered VO₂ RF switch with a record switching cut off frequency (F_CO) of 26.5THz was demonstrated. The switch exhibits an isolation better than 35dB and a low 0.5dB insertion loss up-to 50GHz. The switch features a highly linear response with 1-dB compression point (P_1dB) better than 12dBm and output third-order intercept point (OIP₃) better than 44dBm. The fast insulator to metal-transition (IMT) of the VO₂ enables the switch to have an electrical-turn on delay of less than 25ns.

Original language	English
Title of host publication	2015 IEEE International Electron Devices Meeting, IEDM 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	9.3.1-9.3.4
ISBN (Electronic)	9781467398930
DOIs	https://doi.org/10.1109/IEDM.2015.7409661
State	Published - Feb 16 2015
Externally published	Yes
Event	61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States Duration: Dec 7 2015 → Dec 9 2015

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2016-February
ISSN (Print)	0163-1918

Conference

Conference	61st IEEE International Electron Devices Meeting, IEDM 2015
Country/Territory	United States
City	Washington
Period	12/7/15 → 12/9/15

Access to Document

10.1109/IEDM.2015.7409661

Cite this

Madan, H., Zhang, H. T., Jerry, M., Mukherjee, D., Alem, N., Engel-Herbert, R., & Datta, S. (2015). 26.5 Terahertz electrically triggered RF switch on epitaxial VO₂-on-Sapphire (VOS) wafer. In 2015 IEEE International Electron Devices Meeting, IEDM 2015 (pp. 9.3.1-9.3.4). Article 7409661 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2015.7409661

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title = "26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-Sapphire (VOS) wafer",

abstract = "An electrically triggered VO2 RF switch with a record switching cut off frequency (FCO) of 26.5THz was demonstrated. The switch exhibits an isolation better than 35dB and a low 0.5dB insertion loss up-to 50GHz. The switch features a highly linear response with 1-dB compression point (P1dB) better than 12dBm and output third-order intercept point (OIP3) better than 44dBm. The fast insulator to metal-transition (IMT) of the VO2 enables the switch to have an electrical-turn on delay of less than 25ns.",

author = "H. Madan and Zhang, \{H. T.\} and M. Jerry and D. Mukherjee and N. Alem and R. Engel-Herbert and S. Datta",

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Madan, H, Zhang, HT, Jerry, M, Mukherjee, D, Alem, N, Engel-Herbert, R & Datta, S 2015, 26.5 Terahertz electrically triggered RF switch on epitaxial VO₂-on-Sapphire (VOS) wafer. in 2015 IEEE International Electron Devices Meeting, IEDM 2015., 7409661, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2016-February, Institute of Electrical and Electronics Engineers Inc., pp. 9.3.1-9.3.4, 61st IEEE International Electron Devices Meeting, IEDM 2015, Washington, United States, 12/7/15. https://doi.org/10.1109/IEDM.2015.7409661

26.5 Terahertz electrically triggered RF switch on epitaxial VO₂-on-Sapphire (VOS) wafer. / Madan, H.; Zhang, H. T.; Jerry, M. et al.
2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 9.3.1-9.3.4 7409661 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - An electrically triggered VO2 RF switch with a record switching cut off frequency (FCO) of 26.5THz was demonstrated. The switch exhibits an isolation better than 35dB and a low 0.5dB insertion loss up-to 50GHz. The switch features a highly linear response with 1-dB compression point (P1dB) better than 12dBm and output third-order intercept point (OIP3) better than 44dBm. The fast insulator to metal-transition (IMT) of the VO2 enables the switch to have an electrical-turn on delay of less than 25ns.

AB - An electrically triggered VO2 RF switch with a record switching cut off frequency (FCO) of 26.5THz was demonstrated. The switch exhibits an isolation better than 35dB and a low 0.5dB insertion loss up-to 50GHz. The switch features a highly linear response with 1-dB compression point (P1dB) better than 12dBm and output third-order intercept point (OIP3) better than 44dBm. The fast insulator to metal-transition (IMT) of the VO2 enables the switch to have an electrical-turn on delay of less than 25ns.

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Madan H, Zhang HT, Jerry M, Mukherjee D, Alem N, Engel-Herbert R et al. 26.5 Terahertz electrically triggered RF switch on epitaxial VO₂-on-Sapphire (VOS) wafer. In 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 9.3.1-9.3.4. 7409661. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2015.7409661