26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-Sapphire (VOS) wafer

H. Madan, H. T. Zhang, M. Jerry, D. Mukherjee, N. Alem, R. Engel-Herbert, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

28 Scopus citations

Abstract

An electrically triggered VO2 RF switch with a record switching cut off frequency (FCO) of 26.5THz was demonstrated. The switch exhibits an isolation better than 35dB and a low 0.5dB insertion loss up-to 50GHz. The switch features a highly linear response with 1-dB compression point (P1dB) better than 12dBm and output third-order intercept point (OIP3) better than 44dBm. The fast insulator to metal-transition (IMT) of the VO2 enables the switch to have an electrical-turn on delay of less than 25ns.

Original languageEnglish
Title of host publication2015 IEEE International Electron Devices Meeting, IEDM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages9.3.1-9.3.4
ISBN (Electronic)9781467398930
DOIs
StatePublished - Feb 16 2015
Externally publishedYes
Event61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
Duration: Dec 7 2015Dec 9 2015

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2016-February
ISSN (Print)0163-1918

Conference

Conference61st IEEE International Electron Devices Meeting, IEDM 2015
Country/TerritoryUnited States
CityWashington
Period12/7/1512/9/15

Fingerprint

Dive into the research topics of '26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-Sapphire (VOS) wafer'. Together they form a unique fingerprint.

Cite this