TY - GEN
T1 - 26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-Sapphire (VOS) wafer
AU - Madan, H.
AU - Zhang, H. T.
AU - Jerry, M.
AU - Mukherjee, D.
AU - Alem, N.
AU - Engel-Herbert, R.
AU - Datta, S.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/2/16
Y1 - 2015/2/16
N2 - An electrically triggered VO2 RF switch with a record switching cut off frequency (FCO) of 26.5THz was demonstrated. The switch exhibits an isolation better than 35dB and a low 0.5dB insertion loss up-to 50GHz. The switch features a highly linear response with 1-dB compression point (P1dB) better than 12dBm and output third-order intercept point (OIP3) better than 44dBm. The fast insulator to metal-transition (IMT) of the VO2 enables the switch to have an electrical-turn on delay of less than 25ns.
AB - An electrically triggered VO2 RF switch with a record switching cut off frequency (FCO) of 26.5THz was demonstrated. The switch exhibits an isolation better than 35dB and a low 0.5dB insertion loss up-to 50GHz. The switch features a highly linear response with 1-dB compression point (P1dB) better than 12dBm and output third-order intercept point (OIP3) better than 44dBm. The fast insulator to metal-transition (IMT) of the VO2 enables the switch to have an electrical-turn on delay of less than 25ns.
UR - http://www.scopus.com/inward/record.url?scp=84964000573&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2015.7409661
DO - 10.1109/IEDM.2015.7409661
M3 - Conference contribution
AN - SCOPUS:84964000573
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 9.3.1-9.3.4
BT - 2015 IEEE International Electron Devices Meeting, IEDM 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 61st IEEE International Electron Devices Meeting, IEDM 2015
Y2 - 7 December 2015 through 9 December 2015
ER -