2 kV, 0.7 mO•cm2 Vertical Ga2O3 Superjunction Schottky Rectifier with Dynamic Robustness

Yuan Qin; Matthew Porter; Ming Xiao; Zhonghao Du; Hongming Zhang; Yunwei Ma; Joseph Spencer; Boyan Wang; Qihao Song; Kohei Sasaki; Chia Hung Lin; Ivan Kravchenko; Dayrl P. Briggs; Dale K. Hensley; Marko Tadjer; Han Wang; Yuhao Zhang

doi:10.1109/IEDM45741.2023.10413795

2 kV, 0.7 mO•cm² Vertical Ga₂O₃ Superjunction Schottky Rectifier with Dynamic Robustness

Yuan Qin, Matthew Porter, Ming Xiao, Zhonghao Du, Hongming Zhang, Yunwei Ma, Joseph Spencer, Boyan Wang, Qihao Song, Kohei Sasaki, Chia Hung Lin, Ivan Kravchenko, Dayrl P. Briggs, Dale K. Hensley, Marko Tadjer, Han Wang, Yuhao Zhang

Nanofabrication Research Laboratory

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

We report the first experimental demonstration of a vertical superjunction device in ultra-wide bandgap (UWBG) Ga₂O₃. The device features 1.8 µm wide, 2×10¹⁷ cm^-3 doped n-Ga₂O₃ pillars wrapped by the charge-balanced p-type nickel oxide (NiO). The sidewall NiO is sputtered through a novel self-align process. Benefited from the high doping in Ga₂O₃, the superjunction Schottky barrier diode (SJ-SBD) achieves a ultra-low specific on-resistance (R_ON,SP) of 0.7 mO•cm² with a low turn-on voltage of 1 V and high breakdown voltage (BV) of 2000 V. The R_ON,SP~BV trade-off is among the best in all WBG and UWBG power SBDs. The device also shows good thermal stability with BV > 1.8 kV at 175 °C. In the unclamped inductive switching tests, the device shows a dynamic BV of 2.2 kV and no degradation under 1.7 kV repetitive switching, verifying the fast acceptor depletion in NiO under dynamic switching. Such high-temperature and switching robustness are reported for the first time in a heterogeneous superjunction. These results show the great potential of UWBG superjunction power devices.

Original language	English
Title of host publication	2023 International Electron Devices Meeting, IEDM 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350327670
DOIs	https://doi.org/10.1109/IEDM45741.2023.10413795
State	Published - 2023
Event	2023 International Electron Devices Meeting, IEDM 2023 - San Francisco, United States Duration: Dec 9 2023 → Dec 13 2023

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2023 International Electron Devices Meeting, IEDM 2023
Country/Territory	United States
City	San Francisco
Period	12/9/23 → 12/13/23

Access to Document

10.1109/IEDM45741.2023.10413795

Cite this

Qin, Y., Porter, M., Xiao, M., Du, Z., Zhang, H., Ma, Y., Spencer, J., Wang, B., Song, Q., Sasaki, K., Lin, C. H., Kravchenko, I., Briggs, D. P., Hensley, D. K., Tadjer, M., Wang, H., & Zhang, Y. (2023). 2 kV, 0.7 mO•cm² Vertical Ga₂O₃ Superjunction Schottky Rectifier with Dynamic Robustness. In 2023 International Electron Devices Meeting, IEDM 2023 (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM45741.2023.10413795

@inproceedings{134b19ad04914b98a1ff44961e30ba45,

title = "2 kV, 0.7 mO•cm2 Vertical Ga2O3 Superjunction Schottky Rectifier with Dynamic Robustness",

abstract = "We report the first experimental demonstration of a vertical superjunction device in ultra-wide bandgap (UWBG) Ga2O3. The device features 1.8 µm wide, 2×1017 cm-3 doped n-Ga2O3 pillars wrapped by the charge-balanced p-type nickel oxide (NiO). The sidewall NiO is sputtered through a novel self-align process. Benefited from the high doping in Ga2O3, the superjunction Schottky barrier diode (SJ-SBD) achieves a ultra-low specific on-resistance (RON,SP) of 0.7 mO•cm2 with a low turn-on voltage of 1 V and high breakdown voltage (BV) of 2000 V. The RON,SP~BV trade-off is among the best in all WBG and UWBG power SBDs. The device also shows good thermal stability with BV > 1.8 kV at 175 °C. In the unclamped inductive switching tests, the device shows a dynamic BV of 2.2 kV and no degradation under 1.7 kV repetitive switching, verifying the fast acceptor depletion in NiO under dynamic switching. Such high-temperature and switching robustness are reported for the first time in a heterogeneous superjunction. These results show the great potential of UWBG superjunction power devices.",

author = "Yuan Qin and Matthew Porter and Ming Xiao and Zhonghao Du and Hongming Zhang and Yunwei Ma and Joseph Spencer and Boyan Wang and Qihao Song and Kohei Sasaki and Lin, {Chia Hung} and Ivan Kravchenko and Briggs, {Dayrl P.} and Hensley, {Dale K.} and Marko Tadjer and Han Wang and Yuhao Zhang",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International Electron Devices Meeting, IEDM 2023 ; Conference date: 09-12-2023 Through 13-12-2023",

year = "2023",

doi = "10.1109/IEDM45741.2023.10413795",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 International Electron Devices Meeting, IEDM 2023",

}

Qin, Y, Porter, M, Xiao, M, Du, Z, Zhang, H, Ma, Y, Spencer, J, Wang, B, Song, Q, Sasaki, K, Lin, CH, Kravchenko, I , Briggs, DP , Hensley, DK, Tadjer, M, Wang, H & Zhang, Y 2023, 2 kV, 0.7 mO•cm² Vertical Ga₂O₃ Superjunction Schottky Rectifier with Dynamic Robustness. in 2023 International Electron Devices Meeting, IEDM 2023. Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., 2023 International Electron Devices Meeting, IEDM 2023, San Francisco, United States, 12/9/23. https://doi.org/10.1109/IEDM45741.2023.10413795

2 kV, 0.7 mO•cm² Vertical Ga₂O₃ Superjunction Schottky Rectifier with Dynamic Robustness. / Qin, Yuan; Porter, Matthew; Xiao, Ming et al.
2023 International Electron Devices Meeting, IEDM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - 2 kV, 0.7 mO•cm2 Vertical Ga2O3 Superjunction Schottky Rectifier with Dynamic Robustness

AU - Qin, Yuan

AU - Porter, Matthew

AU - Xiao, Ming

AU - Du, Zhonghao

AU - Zhang, Hongming

AU - Ma, Yunwei

AU - Spencer, Joseph

AU - Wang, Boyan

AU - Song, Qihao

AU - Sasaki, Kohei

AU - Lin, Chia Hung

AU - Kravchenko, Ivan

AU - Briggs, Dayrl P.

AU - Hensley, Dale K.

AU - Tadjer, Marko

AU - Wang, Han

AU - Zhang, Yuhao

PY - 2023

Y1 - 2023

N2 - We report the first experimental demonstration of a vertical superjunction device in ultra-wide bandgap (UWBG) Ga2O3. The device features 1.8 µm wide, 2×1017 cm-3 doped n-Ga2O3 pillars wrapped by the charge-balanced p-type nickel oxide (NiO). The sidewall NiO is sputtered through a novel self-align process. Benefited from the high doping in Ga2O3, the superjunction Schottky barrier diode (SJ-SBD) achieves a ultra-low specific on-resistance (RON,SP) of 0.7 mO•cm2 with a low turn-on voltage of 1 V and high breakdown voltage (BV) of 2000 V. The RON,SP~BV trade-off is among the best in all WBG and UWBG power SBDs. The device also shows good thermal stability with BV > 1.8 kV at 175 °C. In the unclamped inductive switching tests, the device shows a dynamic BV of 2.2 kV and no degradation under 1.7 kV repetitive switching, verifying the fast acceptor depletion in NiO under dynamic switching. Such high-temperature and switching robustness are reported for the first time in a heterogeneous superjunction. These results show the great potential of UWBG superjunction power devices.

AB - We report the first experimental demonstration of a vertical superjunction device in ultra-wide bandgap (UWBG) Ga2O3. The device features 1.8 µm wide, 2×1017 cm-3 doped n-Ga2O3 pillars wrapped by the charge-balanced p-type nickel oxide (NiO). The sidewall NiO is sputtered through a novel self-align process. Benefited from the high doping in Ga2O3, the superjunction Schottky barrier diode (SJ-SBD) achieves a ultra-low specific on-resistance (RON,SP) of 0.7 mO•cm2 with a low turn-on voltage of 1 V and high breakdown voltage (BV) of 2000 V. The RON,SP~BV trade-off is among the best in all WBG and UWBG power SBDs. The device also shows good thermal stability with BV > 1.8 kV at 175 °C. In the unclamped inductive switching tests, the device shows a dynamic BV of 2.2 kV and no degradation under 1.7 kV repetitive switching, verifying the fast acceptor depletion in NiO under dynamic switching. Such high-temperature and switching robustness are reported for the first time in a heterogeneous superjunction. These results show the great potential of UWBG superjunction power devices.

UR - http://www.scopus.com/inward/record.url?scp=85185584417&partnerID=8YFLogxK

U2 - 10.1109/IEDM45741.2023.10413795

DO - 10.1109/IEDM45741.2023.10413795

M3 - Conference contribution

AN - SCOPUS:85185584417

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2023 International Electron Devices Meeting, IEDM 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 International Electron Devices Meeting, IEDM 2023

Y2 - 9 December 2023 through 13 December 2023

ER -