1/f Noise and DC characterization of partially depleted SOI N- and P-MOSFETs from 20°C-250°C

M. N. Ericson; M. Hasanuzzaman; S. C. Terry; C. L. Britton; B. Ohme; S. S. Frank; J. A. Richmond; B. J. Blalock

doi:10.1109/AERO.2005.1559566

1/f Noise and DC characterization of partially depleted SOI N- and P-MOSFETs from 20°C-250°C

M. N. Ericson, M. Hasanuzzaman, S. C. Terry, C. L. Britton, B. Ohme, S. S. Frank, J. A. Richmond, B. J. Blalock

Sensors and Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

A summary of measured small-signal parameters and low frequency noise characterized over temperature is presented for N- and P- MOSFETs fabricated in a partially depleted SOI 0.8-μm process. Small-signal dc parameters critical in analog circuit design are reported including device transconductance efficiency (g _m/I _d), output resistance (r _ds, and threshold voltage (V _t). These parameters are summarized as a function of both gate length (0.8μm, 2.0μm, 5.0μm, and 20μm) and temperature (20°to 300°C). Noise characterization of these devices is also presented with an emphasis on flicker noise over temperature (20°to 250°C). Data is presented in terms of both drain current and inversion coefficient, where appropriate. Use of this information provides the designer with an excellent tool for estimating analog circuit performance in applications where wide temperature range performance is required.

Original language	English
Title of host publication	Proceedings - 2005 IEEE Aerospace Conference
DOIs	https://doi.org/10.1109/AERO.2005.1559566
State	Published - 2005
Event	2005 IEEE Aerospace Conference - Big Sky, MT, United States Duration: Mar 5 2005 → Mar 12 2005

Publication series

Name	IEEE Aerospace Conference Proceedings
Volume	2005
ISSN (Print)	1095-323X

Conference

Conference	2005 IEEE Aerospace Conference
Country/Territory	United States
City	Big Sky, MT
Period	03/5/05 → 03/12/05

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10.1109/AERO.2005.1559566

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Ericson, M. N., Hasanuzzaman, M., Terry, S. C., Britton, C. L., Ohme, B., Frank, S. S., Richmond, J. A., & Blalock, B. J. (2005). 1/f Noise and DC characterization of partially depleted SOI N- and P-MOSFETs from 20°C-250°C. In Proceedings - 2005 IEEE Aerospace Conference Article 1559566 (IEEE Aerospace Conference Proceedings; Vol. 2005). https://doi.org/10.1109/AERO.2005.1559566

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title = "1/f Noise and DC characterization of partially depleted SOI N- and P-MOSFETs from 20°C-250°C",

abstract = "A summary of measured small-signal parameters and low frequency noise characterized over temperature is presented for N- and P- MOSFETs fabricated in a partially depleted SOI 0.8-μm process. Small-signal dc parameters critical in analog circuit design are reported including device transconductance efficiency (g m/I d), output resistance (r ds, and threshold voltage (V t). These parameters are summarized as a function of both gate length (0.8μm, 2.0μm, 5.0μm, and 20μm) and temperature (20°to 300°C). Noise characterization of these devices is also presented with an emphasis on flicker noise over temperature (20°to 250°C). Data is presented in terms of both drain current and inversion coefficient, where appropriate. Use of this information provides the designer with an excellent tool for estimating analog circuit performance in applications where wide temperature range performance is required.",

author = "Ericson, {M. N.} and M. Hasanuzzaman and Terry, {S. C.} and Britton, {C. L.} and B. Ohme and Frank, {S. S.} and Richmond, {J. A.} and Blalock, {B. J.}",

year = "2005",

doi = "10.1109/AERO.2005.1559566",

language = "English",

isbn = "0780388704",

series = "IEEE Aerospace Conference Proceedings",

booktitle = "Proceedings - 2005 IEEE Aerospace Conference",

note = "2005 IEEE Aerospace Conference ; Conference date: 05-03-2005 Through 12-03-2005",

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Ericson, MN, Hasanuzzaman, M, Terry, SC, Britton, CL, Ohme, B, Frank, SS, Richmond, JA & Blalock, BJ 2005, 1/f Noise and DC characterization of partially depleted SOI N- and P-MOSFETs from 20°C-250°C. in Proceedings - 2005 IEEE Aerospace Conference., 1559566, IEEE Aerospace Conference Proceedings, vol. 2005, 2005 IEEE Aerospace Conference, Big Sky, MT, United States, 03/5/05. https://doi.org/10.1109/AERO.2005.1559566

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T1 - 1/f Noise and DC characterization of partially depleted SOI N- and P-MOSFETs from 20°C-250°C

AU - Ericson, M. N.

AU - Hasanuzzaman, M.

AU - Terry, S. C.

AU - Britton, C. L.

AU - Ohme, B.

AU - Frank, S. S.

AU - Richmond, J. A.

AU - Blalock, B. J.

PY - 2005

Y1 - 2005

N2 - A summary of measured small-signal parameters and low frequency noise characterized over temperature is presented for N- and P- MOSFETs fabricated in a partially depleted SOI 0.8-μm process. Small-signal dc parameters critical in analog circuit design are reported including device transconductance efficiency (g m/I d), output resistance (r ds, and threshold voltage (V t). These parameters are summarized as a function of both gate length (0.8μm, 2.0μm, 5.0μm, and 20μm) and temperature (20°to 300°C). Noise characterization of these devices is also presented with an emphasis on flicker noise over temperature (20°to 250°C). Data is presented in terms of both drain current and inversion coefficient, where appropriate. Use of this information provides the designer with an excellent tool for estimating analog circuit performance in applications where wide temperature range performance is required.

AB - A summary of measured small-signal parameters and low frequency noise characterized over temperature is presented for N- and P- MOSFETs fabricated in a partially depleted SOI 0.8-μm process. Small-signal dc parameters critical in analog circuit design are reported including device transconductance efficiency (g m/I d), output resistance (r ds, and threshold voltage (V t). These parameters are summarized as a function of both gate length (0.8μm, 2.0μm, 5.0μm, and 20μm) and temperature (20°to 300°C). Noise characterization of these devices is also presented with an emphasis on flicker noise over temperature (20°to 250°C). Data is presented in terms of both drain current and inversion coefficient, where appropriate. Use of this information provides the designer with an excellent tool for estimating analog circuit performance in applications where wide temperature range performance is required.

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SN - 0780388704

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ER -

1/f Noise and DC characterization of partially depleted SOI N- and P-MOSFETs from 20°C-250°C

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