121.6 nm radiation source for advanced lithography

Jianxun Yan; Ashraf El-Dakrouri; Mounir Laroussi; Mool C. Gupta

doi:10.1116/1.1515302

121.6 nm radiation source for advanced lithography

Jianxun Yan, Ashraf El-Dakrouri, Mounir Laroussi, Mool C. Gupta

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

A study was performed to demonstrate a DBD-based VUV source that emits strong radiation at 121.6 nm. Using high-pressure neon with a small admixture of hydrogen, an intense and nearly monochromatic source at the Lyman-α line was built with FWHM less than 0.03 nm. The emission spectrum, optical power, efficiency, beam profile, and stability were studied. As a result, it was possible to achieve high power, spectrally narrow and stable 121.6 nm sources from a compact lamp for advanced lithography and other applications.

Original language	English
Pages (from-to)	2574-2577
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	6
DOIs	https://doi.org/10.1116/1.1515302
State	Published - 2002
Externally published	Yes

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title = "121.6 nm radiation source for advanced lithography",

abstract = "A study was performed to demonstrate a DBD-based VUV source that emits strong radiation at 121.6 nm. Using high-pressure neon with a small admixture of hydrogen, an intense and nearly monochromatic source at the Lyman-α line was built with FWHM less than 0.03 nm. The emission spectrum, optical power, efficiency, beam profile, and stability were studied. As a result, it was possible to achieve high power, spectrally narrow and stable 121.6 nm sources from a compact lamp for advanced lithography and other applications.",

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T1 - 121.6 nm radiation source for advanced lithography

AU - Yan, Jianxun

AU - El-Dakrouri, Ashraf

AU - Laroussi, Mounir

AU - Gupta, Mool C.

PY - 2002

Y1 - 2002

N2 - A study was performed to demonstrate a DBD-based VUV source that emits strong radiation at 121.6 nm. Using high-pressure neon with a small admixture of hydrogen, an intense and nearly monochromatic source at the Lyman-α line was built with FWHM less than 0.03 nm. The emission spectrum, optical power, efficiency, beam profile, and stability were studied. As a result, it was possible to achieve high power, spectrally narrow and stable 121.6 nm sources from a compact lamp for advanced lithography and other applications.

AB - A study was performed to demonstrate a DBD-based VUV source that emits strong radiation at 121.6 nm. Using high-pressure neon with a small admixture of hydrogen, an intense and nearly monochromatic source at the Lyman-α line was built with FWHM less than 0.03 nm. The emission spectrum, optical power, efficiency, beam profile, and stability were studied. As a result, it was possible to achieve high power, spectrally narrow and stable 121.6 nm sources from a compact lamp for advanced lithography and other applications.

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U2 - 10.1116/1.1515302

DO - 10.1116/1.1515302

M3 - Article

AN - SCOPUS:0036883117

SN - 0734-211X

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EP - 2577

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

121.6 nm radiation source for advanced lithography

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