1060 nm wavelength high power diode array module

Shun Yao; Ge Tao Tao; Guo Guang Lu; Yun Liu; Di Yao; Li Jun Wang

1060 nm wavelength high power diode array module

Shun Yao
, Ge Tao Tao
, Guo Guang Lu
, Yun Liu
, Di Yao
, Li Jun Wang

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

InGaAs/GaAsP strained-compensated single-quantum well structure with an emission wavelength of 1060 nm was grown. The laser bars with a stripe width of 200 μm and a filling factor of 50% was fabricated. The back HR coating is Al₂O₃ /5(HfO₂/SiO₂)/HfO₂ and the front AR coating is Al₂O₃. The module's CW output power reaches to 68.5 W at a current of 80 A. The threshold current is 10 A and the central wavelength is 1059 nm with a FWHM of 9 nm.

Original language	English
Pages (from-to)	8-11
Number of pages	4
Journal	Guangxue Jingmi Gongcheng/Optics and Precision Engineering
Volume	14
Issue number	1
State	Published - Feb 2006
Externally published	Yes

Keywords

AR coating
Array module
HR coating
High power laser
Semiconductor laser

Cite this

@article{9753d82a169b4f96890b3a329fc7b0c0,

title = "1060 nm wavelength high power diode array module",

abstract = "InGaAs/GaAsP strained-compensated single-quantum well structure with an emission wavelength of 1060 nm was grown. The laser bars with a stripe width of 200 μm and a filling factor of 50\% was fabricated. The back HR coating is Al2O3 /5(HfO2/SiO2)/HfO2 and the front AR coating is Al2O3. The module's CW output power reaches to 68.5 W at a current of 80 A. The threshold current is 10 A and the central wavelength is 1059 nm with a FWHM of 9 nm.",

keywords = "AR coating, Array module, HR coating, High power laser, Semiconductor laser",

author = "Shun Yao and Tao, \{Ge Tao\} and Lu, \{Guo Guang\} and Yun Liu and Di Yao and Wang, \{Li Jun\}",

year = "2006",

month = feb,

language = "English",

volume = "14",

pages = "8--11",

journal = "Guangxue Jingmi Gongcheng/Optics and Precision Engineering",

issn = "1004-924X",

number = "1",

}

TY - JOUR

T1 - 1060 nm wavelength high power diode array module

AU - Yao, Shun

AU - Tao, Ge Tao

AU - Lu, Guo Guang

AU - Liu, Yun

AU - Yao, Di

AU - Wang, Li Jun

PY - 2006/2

Y1 - 2006/2

N2 - InGaAs/GaAsP strained-compensated single-quantum well structure with an emission wavelength of 1060 nm was grown. The laser bars with a stripe width of 200 μm and a filling factor of 50% was fabricated. The back HR coating is Al2O3 /5(HfO2/SiO2)/HfO2 and the front AR coating is Al2O3. The module's CW output power reaches to 68.5 W at a current of 80 A. The threshold current is 10 A and the central wavelength is 1059 nm with a FWHM of 9 nm.

AB - InGaAs/GaAsP strained-compensated single-quantum well structure with an emission wavelength of 1060 nm was grown. The laser bars with a stripe width of 200 μm and a filling factor of 50% was fabricated. The back HR coating is Al2O3 /5(HfO2/SiO2)/HfO2 and the front AR coating is Al2O3. The module's CW output power reaches to 68.5 W at a current of 80 A. The threshold current is 10 A and the central wavelength is 1059 nm with a FWHM of 9 nm.

KW - AR coating

KW - Array module

KW - HR coating

KW - High power laser

KW - Semiconductor laser

UR - https://www.scopus.com/pages/publications/33646882848

M3 - Article

AN - SCOPUS:33646882848

SN - 1004-924X

VL - 14

SP - 8

EP - 11

JO - Guangxue Jingmi Gongcheng/Optics and Precision Engineering

JF - Guangxue Jingmi Gongcheng/Optics and Precision Engineering

IS - 1

ER -

1060 nm wavelength high power diode array module

Abstract

Keywords

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