1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier

Yuan Qin; Ming Xiao; Ruizhe Zhang; Qingyun Xie; Tomas Palacios; Boyan Wang; Yunwei Ma; Ivan Kravchenko; Dayrl P. Briggs; Dale K. Hensley; Bernadeta R. Srijanto; Yuhao Zhang

doi:10.1109/LED.2023.3282025

1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier

Yuan Qin, Ming Xiao, Ruizhe Zhang, Qingyun Xie, Tomas Palacios, Boyan Wang, Yunwei Ma, Ivan Kravchenko, Dayrl P. Briggs, Dale K. Hensley, Bernadeta R. Srijanto, Yuhao Zhang

Nanofabrication Research Laboratory

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

This work demonstrates quasi-vertical GaN Schottky barrier diodes (SBDs) on 6-inch Si substrate with a breakdown voltage (BV) over 1 kV, the highest BV reported in vertical GaN-on-Si SBDs to date. The deep mesa inherently in quasi-vertical devices is leveraged to form a self-aligned edge termination, and the mesa sidewall is covered by the p-type nickel oxide (NiO) as a reduced surface field (RESURF) structure. This novel termination enables a parallel-plane junction electric field of 2.8 MV/cm. The device also shows low turn-on voltage of 0.5 V, and low specific on-resistance of 1.1 $\text{m}\Omega \cdot $ cm2. Moreover, the device exhibits excellent overvoltage robustness under the continuous 800 V stress in the unclamped inductive switching test. These results show the good promise of the low-cost vertical GaN-on-Si power diodes.

Original language	English
Pages (from-to)	1052-1055
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	44
Issue number	7
DOIs	https://doi.org/10.1109/LED.2023.3282025
State	Published - Jul 1 2023

Funding

This work was supported in part by the National Science Foundation under Grant ECCS-2230412 and Grant ECCS-2045001.

Keywords

Power electronics
breakdown voltage
gallium nitride
reliability
vertical device
wide bandgap

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10.1109/LED.2023.3282025

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title = "1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier",

abstract = "This work demonstrates quasi-vertical GaN Schottky barrier diodes (SBDs) on 6-inch Si substrate with a breakdown voltage (BV) over 1 kV, the highest BV reported in vertical GaN-on-Si SBDs to date. The deep mesa inherently in quasi-vertical devices is leveraged to form a self-aligned edge termination, and the mesa sidewall is covered by the p-type nickel oxide (NiO) as a reduced surface field (RESURF) structure. This novel termination enables a parallel-plane junction electric field of 2.8 MV/cm. The device also shows low turn-on voltage of 0.5 V, and low specific on-resistance of 1.1 $\text{m}\Omega \cdot $ cm2. Moreover, the device exhibits excellent overvoltage robustness under the continuous 800 V stress in the unclamped inductive switching test. These results show the good promise of the low-cost vertical GaN-on-Si power diodes.",

keywords = "Power electronics, breakdown voltage, gallium nitride, reliability, vertical device, wide bandgap",

author = "Yuan Qin and Ming Xiao and Ruizhe Zhang and Qingyun Xie and Tomas Palacios and Boyan Wang and Yunwei Ma and Ivan Kravchenko and Briggs, {Dayrl P.} and Hensley, {Dale K.} and Srijanto, {Bernadeta R.} and Yuhao Zhang",

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doi = "10.1109/LED.2023.3282025",

language = "English",

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T1 - 1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier

AU - Qin, Yuan

AU - Xiao, Ming

AU - Zhang, Ruizhe

AU - Xie, Qingyun

AU - Palacios, Tomas

AU - Wang, Boyan

AU - Ma, Yunwei

AU - Kravchenko, Ivan

AU - Briggs, Dayrl P.

AU - Hensley, Dale K.

AU - Srijanto, Bernadeta R.

AU - Zhang, Yuhao

PY - 2023/7/1

Y1 - 2023/7/1

N2 - This work demonstrates quasi-vertical GaN Schottky barrier diodes (SBDs) on 6-inch Si substrate with a breakdown voltage (BV) over 1 kV, the highest BV reported in vertical GaN-on-Si SBDs to date. The deep mesa inherently in quasi-vertical devices is leveraged to form a self-aligned edge termination, and the mesa sidewall is covered by the p-type nickel oxide (NiO) as a reduced surface field (RESURF) structure. This novel termination enables a parallel-plane junction electric field of 2.8 MV/cm. The device also shows low turn-on voltage of 0.5 V, and low specific on-resistance of 1.1 $\text{m}\Omega \cdot $ cm2. Moreover, the device exhibits excellent overvoltage robustness under the continuous 800 V stress in the unclamped inductive switching test. These results show the good promise of the low-cost vertical GaN-on-Si power diodes.

AB - This work demonstrates quasi-vertical GaN Schottky barrier diodes (SBDs) on 6-inch Si substrate with a breakdown voltage (BV) over 1 kV, the highest BV reported in vertical GaN-on-Si SBDs to date. The deep mesa inherently in quasi-vertical devices is leveraged to form a self-aligned edge termination, and the mesa sidewall is covered by the p-type nickel oxide (NiO) as a reduced surface field (RESURF) structure. This novel termination enables a parallel-plane junction electric field of 2.8 MV/cm. The device also shows low turn-on voltage of 0.5 V, and low specific on-resistance of 1.1 $\text{m}\Omega \cdot $ cm2. Moreover, the device exhibits excellent overvoltage robustness under the continuous 800 V stress in the unclamped inductive switching test. These results show the good promise of the low-cost vertical GaN-on-Si power diodes.

KW - Power electronics

KW - breakdown voltage

KW - gallium nitride

KW - reliability

KW - vertical device

KW - wide bandgap

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JO - IEEE Electron Device Letters

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ER -

1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier

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