低功耗、高灵敏的Bi₂O₂Se光电导探测器

With the advent of graphene, atomically thin two-dimensional materials receive great attention in both science and technology. However, the characterization of zero-band gap of graphene hinders its applications in semiconductor logic and memory devices. To make up for the imperfection of graphene, one has made efforts to search for other two-dimensional layered materials. The Bi₂O₂Se is an emerging material with very high electron mobility, modest bandgap, and excellent thermal and chemical stability. In this work, high-quality Bi₂O₂Se thin films are synthesized through chemical vapor deposition. The effect of temperature on the morphology and size distribution of Bi₂O₂Se thin film are discussed in detail experimentally. Under an optimized experimental condition, the Bi₂O₂Se thin films with a lateral size of 100 μm are achieved. Interestingly, Bi₂O₂Se nanowires are obtained at a lower growth temperature (620-640 ℃). The photoelectric performances of Bi₂O₂Se on mica and silicon oxide substrate are examined based on a photoconductive mode. At a small bias of 0.5 V, the responsivity and specific detectivity of the rectangular Bi₂O₂Se thin film on the mica substrate reach 45800 A/W and 2.65 × 10¹² Jones, respectively, and the corresponding photoelectric gain is greater than 10⁵. The photoelectric performance of our device is comparable to the best results achieved by other research groups, which may be related to the higher quality and appropriate absorption thickness. The Bi₂O₂Se nanowire and Bi₂O₂Se thin film transferred to Si/SiO₂ by a polystyrene-assisted method also exhibit a good photoresponse under the illumination of a 532 nm laser with a high optical power density (127.4 mW/cm²). The experimental results demonstrate that the Bi₂O₂Se has great potential applications in the optoelectronic devices with low power consumption and high sensitivity.